کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10716301 | 1027550 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies of radiation effects in the NA60 silicon pixel detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Studies of radiation effects in the NA60 silicon pixel detectors Studies of radiation effects in the NA60 silicon pixel detectors](/preview/png/10716301.png)
چکیده انگلیسی
NA60 is a fixed target experiment at the CERN SPS, which studies dimuon production in proton- and ion-induced collisions. Downstream of the target system a silicon pixel telescope made with p-on-n silicon sensors measures the charged tracks originating from the interactions. During the 2003 data taking period with indium-indium collisions at 158Â GeV per incident nucleon, a significant radiation dose with a very inhomogeneous distribution has been accumulated in the pixel telescope, leading to partially type-inverted silicon sensors. Measurements of the depletion voltage and leakage current performed during this run are shown and compared with simulation results. It is also shown that the operation of partially type-inverted sensors poses no major problem.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 546, Issue 3, 11 July 2005, Pages 448-456
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 546, Issue 3, 11 July 2005, Pages 448-456
نویسندگان
M. Keil, K. Banicz, M. Brugger, M. Floris, J.M. Heuser, C. Lourenço, H. Ohnishi, E. Radermacher, G. Usai,