کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10717499 | 1027597 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature](/preview/png/10717499.png)
چکیده انگلیسی
A geometric model of charge collection has been developed to measure the Lorentz angle in silicon sensors. The model relates the track inclination to the average cluster width. A Lorentz angle of 19.6±0.27-0.5+1.0â was measured by fitting the model to cosmic ray data collected with the double-sided silicon strip sensors of the ATHENA antihydrogen detector. This measurement corresponds to holes drifting in sensors operated at 130 K, in a 3 T magnetic field and with an average internal electric field of 1.3 kV/cm. Comparisons of charge sharing between strips and track residuals for data taken with and without magnetic field are also presented and support this measurement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 540, Issue 1, 11 March 2005, Pages 113-120
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 540, Issue 1, 11 March 2005, Pages 113-120
نویسندگان
I. Johnson, C. Amsler, V. Chiochia, A. Dorokhov, H. Pruys, C. Regenfus, J. Rochet,