کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10727197 | 1037478 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The explanation of InN bandgap discrepancy based on experiments and first-principle calculations The explanation of InN bandgap discrepancy based on experiments and first-principle calculations](/preview/png/10727197.png)
چکیده انگلیسی
Indium nitride (InN) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (GaN) buffer through metal-organic chemical vapor deposition (MOCVD) method. Based on first-principle calculations, we confirm that the widening of InN optical bandgap reported before is caused by high density of free electrons. To find the contributor of the free electrons, the characteristic energetic levels of ON, VN and SiIn are investigated. We find that they are all high enough to uplift the optical bandgap from about 0.78 eV to 1.9 eV, which almost can't be enlarged further when it reaches 2.09 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 375, Issue 7, 14 February 2011, Pages 1152-1155
Journal: Physics Letters A - Volume 375, Issue 7, 14 February 2011, Pages 1152-1155
نویسندگان
Chaoren Liu, Jingbo Li,