Structural modifications of AlInN/GaN thin films by neon ion implantation

To study ion beam induced modifications into MOCVD grown wurtzite AlInN layers, neon ions were implanted on the samples with four doses ranging from 1014 to 9×1015ions/cm2. Structural characterization was carried out by X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques. XRD analysis revealed that GaN related peak for all samples remains at its usual Bragg position of 2θ=34.56° whereas a shift in AlInN peak takes place from its position of 2θ=35.51° for as-grown sample. Rutherford back scattering (RBS) analysis indicated that peak related to Ga atoms in capping layer provided evidence of partial sputtering of GaN cap layers. Moreover, Al peak position is shifted towards lower channel side and width of the signal is increased after implantation, which pointed to the inwards migration of Al atoms away from the AlInN surface. The results suggested that partial sputtering of cap layer has taken place without uncovering the underneath AlInN layer.