Keywords: III-نیتریت ها; Implantation; Defects; III-nitrides;
مقالات ISI III-نیتریت ها (ترجمه نشده)
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Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices
Keywords: III-نیتریت ها; III-Nitrides; InGaN; MOCVD; SPSL; Photoluminescence; Carrier localization;
Low-temperature and global epitaxy of GaN on amorphous glass substrates by molecular beam epitaxy via a compound buffer layer
Keywords: III-نیتریت ها; III-nitrides; Quartz glass substrate; Low substrate temperature; Pre-orienting layer; Nucleation layer;
Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
Keywords: III-نیتریت ها; III-nitrides; AlInN; AlN buffer; RF-sputtering; Characterization; Photovoltaics;
Ab initio study of novel III-V nitride alloys B1-xTlxN for optoelectronic applications
Keywords: III-نیتریت ها; III-Nitrides; III-V;FP-LAPW; GGA-PBEsol, TB-mBJ, Spin-orbit coupling; Electronic structure; Optical properties;
Spatial redistribution of photoexcited carriers in InGaN/GaN structures emitting in a wide spectral range
Keywords: III-نیتریت ها; III-nitrides; InGaN; Photoluminescence; Carrier localization;
Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
Keywords: III-نیتریت ها; Ellipsometry; III-nitrides; Molecular beam epitaxy;
Photoluminescence efficiency of BGaN epitaxial layers with high boron content
Keywords: III-نیتریت ها; III-nitrides; BGaN; Photoluminescence; Efficiency
Investigations on the nanostructures of GaN, InN and InxGa1−xN
Keywords: III-نیتریت ها; III-Nitrides; Hydrothermal method; X-ray diffraction (XRD); High resolution transmission electron microscopy (HR-TEM)
Electron channelling contrast imaging for III-nitride thin film structures
Keywords: III-نیتریت ها; ECCI; III-nitrides; Extended defects; SEM and thin films;
Reprint of: Electron channelling contrast imaging for III-nitride thin film structures
Keywords: III-نیتریت ها; ECCI; III-nitrides; Extended defects; SEM and thin films;
How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies
Keywords: III-نیتریت ها; Wide band gap semiconductor; III-nitrides; GaN; GaN-on-Si; Design-for-Reliability; Reliability; Transition State Theory; Quantum statistics; Maxwell-Boltzmann distribution;
Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring
Keywords: III-نیتریت ها; III-nitrides; selective etching; photoelectrochemical etching; voltammetry; quantum dots
Electrical properties of extended defects in III-nitrides
Keywords: III-نیتریت ها; III-Nitrides; Dislocations; V-defects; Electrical activity of extended defects; AFM;
Deep traps in GaN-based structures as affecting the performance of GaN devices
Keywords: III-نیتریت ها; III-Nitrides; Dislocations; Deep traps; HEMT; LED; Device degradation;
The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate
Keywords: III-نیتریت ها; III-nitrides; Reversed polarization LEDs; p-side down structure; Yellow emission
Investigation of electron energy states in InGaN/GaN multiple quantum wells
Keywords: III-نیتریت ها; MQWs; III-nitrides; DLTS; Photoluminescence; Energy states; Blue LED
Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
Keywords: III-نیتریت ها; InGaN; Quantum dots; Semipolar; III-Nitrides; MBE; Electron microscopy;
Chemical analysis using coincidence Doppler broadening and supporting first-principles theory: Applications to vacancy defects in compound semiconductors
Keywords: III-نیتریت ها; Positron annihilation spectroscopy; Coincidence Doppler broadening; III-nitrides; Density functional theory; Electron momentum density;
Structure and strain state of polar and semipolar InGaN quantum dots
Keywords: III-نیتریت ها; Quantum dots; InGaN; III-Nitrides; Transmission electron microscopy; Strain;
Critical design issues for high-power GaN/AlGaN anti-serial Schottky varactor frequency triplers
Keywords: III-نیتریت ها; Varactor; III-Nitrides; Microwave; HEMT; Multiplier; Gallium nitride
First-principles calculations to investigate optical properties of ByAlxIn1âxâyN alloys for optoelectronic devices
Keywords: III-نیتریت ها; III-Nitrides; QW laser; Optical properties;
Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
Keywords: III-نیتریت ها; Spectroscopic ellipsometry; GaN; III-Nitrides; Raman spectroscopy; MOCVD; Thin films; Substrate engineering; Ion-implantation;
GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea
Keywords: III-نیتریت ها; Sensors; III-nitrides; Semiconductors; Biosensors
Studying cubic boron nitride by Raman and infrared spectroscopies
Keywords: III-نیتریت ها; III-Nitrides; Cubic boron nitride; Optical characterization; Raman spectroscopy
Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates
Keywords: III-نیتریت ها; Ultraviolet light emitting diodes; III-Nitrides; Defects; Radiative lifetime
Inhomogeneous injection in polar and nonpolar III-nitride light-emitters
Keywords: III-نیتریت ها; III-Nitrides; LED; Diode lasers; Injection efficiency; Green gap
Electrical and luminescent properties and deep traps spectra of N-polar GaN films
Keywords: III-نیتریت ها; III-Nitrides; MOCVD; N-polar; Deep traps
Thermal conductance of the interfaces between the III-nitride materials and their substrates: Effects of intrinsic material properties and interface conditions
Keywords: III-نیتریت ها; Interface thermal conductance; Phonon transmission; III-nitrides;
Enhancement of blue emission from GaN films and diodes by water vapor remote plasma treatment
Keywords: III-نیتریت ها; III-nitrides; Blue emission; Hydrogen; Plasma treatment
Calculation of the effective indices of a GaN/InxGa1−xN optical guiding structure
Keywords: III-نیتریت ها; Integrated optics; Step index optical waveguide; Effective refractive index; III-nitrides
Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
Keywords: III-نیتریت ها; III-nitrides; Mg-doped; Metastability; Luminescence
Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
Keywords: III-نیتریت ها; III-Nitrides; Molecular beam epitaxy; Silicon doping; AlGaN/GaN heterostructures; High electron mobility transistors
Ab initio study of the nitridation of the GaAs (100) surfaces
Keywords: III-نیتریت ها; Surfaces; Adsorption; Total energy; Nitridation; III-Nitrides;
Electron trapping effects in C- and Fe-doped GaN and AlGaN
Keywords: III-نیتریت ها; 71.55.Eq; 73.50.Gr; 78.66.Fd; III-Nitrides; Cathodoluminescence; EBIC; Lifetime; Diffusion length;
A first principle study of band structure of III-nitride compounds
Keywords: III-نیتریت ها; 71.15.âm; 71.15.Ap; 71.15.Mb; 71.20.âb; 71.21.Nr; 71.55.Eq; Semiconductors; III-V Compounds; III-nitrides; Bandgap; WIEN2k; FPLAPW;