کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411661 | 894772 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron trapping effects in C- and Fe-doped GaN and AlGaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electron trapping effects in C- and Fe-doped GaN and AlGaN Electron trapping effects in C- and Fe-doped GaN and AlGaN](/preview/png/10411661.png)
چکیده انگلیسی
Iron- and carbon-doped GaN and iron-doped Al0.2Ga0.8N irradiated by low energy electron beam of scanning electron microscope were studied by cathodoluminescence and electron beam-induced current techniques. Irradiation is shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energies for irradiation-induced effects of 210, 230, and 360Â meV for GaN:C, GaN:Fe, and Al0.2Ga0.8N:Fe, respectively. These observations are consistent with trapping of non-equilibrium electrons on deep, non-ionized acceptor levels.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 10, October 2005, Pages 1662-1668
Journal: Solid-State Electronics - Volume 49, Issue 10, October 2005, Pages 1662-1668
نویسندگان
Olena Lopatiuk, Andrei Osinsky, Amir Dabiran, Konstantin Gartsman, Isai Feldman, Leonid Chernyak,