کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
746247 1462213 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Superlattice-like film for high data retention and high speed phase change random access memory
ترجمه فارسی عنوان
فیلم ابرشبکه مانند برای حفظ اطلاعات بالا و فاز با سرعت بالا تغییر حافظه با دسترسی تصادفی
کلمات کلیدی
ابرشبکه مانند؛ PARAM؛ Ti0.43Sb2Te3
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی


• Superlattice-like film (SLF) owns high data retention.
• SLF-based cell can reach to crystallization speed of 5 ns.
• SLF-based cell power consumption of reset operation is decreased by 65.2%.
• Two dimensional thermal transient simulation of reset operation is carried out.

Superlattice-like film (SLF) was formed alternately by Ti0.43Sb2Te3 (TST) and TiN, and TST is employed as phase change layers and TiN is employed as isolation layers of TST film. Comparing with single TST film with the same thickness, SLF owns higher data retention, higher phase change speed (5 ns) and endurance up to 1 × 105 cycles, and its power consumption of reset operation is significantly decreased by 65.2%. Two-dimensional thermal transient simulation of reset operation indicates that SLF-based device owns higher heating efficiency than 30-nm-thick TST-based device.

Comparing Fig. 1(a) with (b), the minimum of set pulse width of 30-nm-thick Ti0.43Sb2Te3 film based device (30F-D) is 10 ns, while superlattice-like film based device (SLF-D), even in 5 ns pulse width, the limit of pulse generator, can till realize set/reset operation, indicating that SLF has higher crystallization speed than 30F. Under the same pulse, the set/reset voltage are smaller than that of 30F-D and reset voltage decreases more obviously, which is beneficial to lowing power consumption. Two-dimensional thermal transient simulation of reset operation (Fig. 2) shows that SLF-D owns higher heating efficiency than 30F-D device, which may be the main reason of reset voltage decreasing greatly.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 120, June 2016, Pages 52–55
نویسندگان
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