Keywords: 68.55.âa; 78.66.Fd; 81.15.Fg; Semiconductors; Laser processing; Luminescence; Photoelectron spectroscopy;
مقالات ISI (ترجمه نشده)
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Study of electron-related optical responses in the Tietz-Hua quantum well: Role of applied external fields
Keywords: 73.21.Fg; 78.66.Fd; 78.67.De; Tietz-Hua quantum well; Optical response; Intense laser field;
Effects of pre-annealed ITO film on the electrical characteristics of high-reflectance Ni/Ag/Ni/Au contacts to p-type GaN
Keywords: 78.66.Fd; GaN; Ohmic contact; Pre-annealed ITO film; Flip-chip LED;
Two-source coevaporation technique for synthesis of indium phosphide films with controlled composition
Keywords: 68.55.−a; 78.66.Fd; 81.15.Fg; 78.20.−eInP films; III–V semiconductor; Optical properties
Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering
Keywords: 78.66.Fd; 78.40.Fy; 81.15.Cd; semiconducting III-V materials; InAlN; optical properties; magnetron sputtering;
Intersubband optical absorption coefficients and refractive index changes in a parabolic cylinder quantum dot
Keywords: 73.21.La; 78.66.Fd; 78.67.-nParabolic cylinder coordinates; Quantum dots; Nonlinear optical properties
The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots
Keywords: 78.20.Ls; 78.47.+p; 78.55.Cr; 78.66.Fd; 78.67.Hc; Circular polarization; Photoluminescence; InAlAs/AlGaAs quantum dots;
High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) applications
Keywords: 78.66.Fd; GaN; FCLED; Diffusion barrier; Ohmic contact; Reflectance;
Observation of new critical point in InxAl1âxAs alloy using spectroscopic ellipsometry
Keywords: 78.20.Ci; 78.66.Fd; 71.20.Nr; Ellipsometry; InAlAs; Dielectric function; Band calculation; LASTO;
Electric-field effects in optically generated spin transport
Keywords: 78.66.Fd; 42.70.-a; 74.25.Gz; 78.20.-e; Semiconductors; Optical properties; Electronic transport;
Exciton localization effect in Mn-implanted GaN by photoluminescence measurements
Keywords: 78.66.Fd; 78.55.Et; 61.72.Vv; 71.55.Eq; Diluted magnetic semiconductors; PL spectra; Exciton localization;
Growth and characterization of m-plane GaN-based layers on LiAlO2 (1Â 0Â 0) grown by MOVPE
Keywords: 78.55.âm; 78.66.Fd; 78.67.De; A1. Characterization; A1. High resolution XRD; A3. MOVPE; A3. Quantum wells; B1. Nitrides;
Comparison of structural and optical properties of GaSb/AlGaSb quantum well structures grown on different oriented Si substrates
Keywords: 68.37.Lp; 78.55.Cr; 78.66.Fd; 78.67.De; 81.05.Ea; 81.15.HiA3. Molecular beam epitaxy; A3. Quantum wells; B1. Antimonides
Electrical characterization of rare-earth implanted GaN
Keywords: 78.66.Fd; 91.60.Ed; 68.55.Ln; 61.72.VvGan; Implantation; Rare-earth; Defects
Photoluminescence emissions both in the visible and infrared spectra from thin, uncapped InN deposits
Keywords: 68.37.Ps; 68.55.A−; 78.66.Fd; 81.15.GhA1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting indium compounds
GaInAsN growth studies for InP-based long-wavelength laser applications (TUA3-3)
Keywords: 61.05.Cp; 78.55.Cr; 78.66.Fd; 81.05.Ea; 81.07.St; 81.15.Hi; 85.60.Bt; A3. Quantum wells; A3. Superlattices; B1. Nitrides; B2. Semiconducting indium compounds;
GaAs1-xBixGaAs1-xBix light emitting diodes
Keywords: A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B3. Light emitting diodes71.20.Nr; 71.55.Eq; 78.30.Fs; 78.60.Fi; 78.66.Fd
Effect of the MgO substrate on the growth of GaN
Keywords: A1. Diffusion; A1. Growth models; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B1. Oxides81.15.Hi; 81.05.Ea; 71.55.Eq; 78.66.Fd; 61.05.cp
Preparation of GaN films on glass substrates by middle frequency magnetron sputtering
Keywords: 78.55.Cr; 78.30.Fs; 78.66.Fd; 78.67.BfA1. Surface structure; A3. Physical vapor deposition processes; B1. Gallium compounds; B2. Semiconducting III–V materials
Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications
Keywords: 29.30.Ep; 29.30.Dn; 29.40.Mc; 71.55.Eq; 71.55.Gs; 78.20.Ci; 78.47.Cd; 78.60.Hk; 78.66.Fd; 78.66.HfA3. Metalorganic vapor phase epitaxy; B1. Nitrides; B1. Oxides; B1. Zinc compounds; B2. Phosphors; B2. Scintillator materials
MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy
Keywords: 42.55.Px; 61.72.Ff; 78.66.Fd; 81.05.Ea; 81.15.GhA1. Reflectance anisotropy spectroscopy (RAS/RDS); A3. Metalorganic vapour phase epitaxy; A3. Quantum wells; B1. GaAsP; B1. InGaAs; B3. Laser diodes
Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers
Keywords: 61.05.cp; 68.55.J−; 78.66.Fd; 81.15.GhA1. Stresses; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. GaInP
Ab initio study of confinement and surface effects in hexagonal AlN nanotubes
Keywords: 78.66.Fd; 78.67.Ch; 77.65.−j; 74.25.Jb; 74.25.GzAlN nanotubes; Confinement effect; Surface effect; Electronic properties; Optical properties; Piezoelectric field effect
The ion photon emission microscope on SNL’s nuclear microprobe and in LBNL’s cyclotron facility
Keywords: 78.45.th; 78.66.Fd; 81.05.Ea; 85.40.QxGallium nitride; Ionoluminescence; Radiation effects microscopy; Radiation hardness; Luminescence; Nuclear microprobe; Cyclotron
MBE growth and characterization of TlInGaAsN double quantum well structures
Keywords: 78.66.Fd; 78.60.Fi; 61.72.Vv; A3. Molecular beam epitaxy; B1. Arsenides; B1. Nitrides; B1. Phosphides; B2. Semiconducting III-V materials;
Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0 0 0 1) by metal-organic chemical vapor deposition
Keywords: 07.55.Jg; 61.05.cp; 73.61.Ey; 75.50.Pp; 78.66.Fd; 81.05.Ea; 81.15.GhMetal-organic chemical vapor deposition; Mn-doped GaN; Diluted magnetic semiconductor; Spintronics
Quantum dot lasers: From promise to high-performance devices
Keywords: 42.55.Px; 78.66.Fd; 78.67.Hc; 72.25.−bA1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B3. Laser diodes
Electrical properties and optical bandgaps of AlInN films by reactive sputtering
Keywords: 78.66.Fd; 73.61.Ey; 72.80.EyA3. Poly crystalline deposition; B1. Nitrides; B3. Light emitting diodes
Spatial emission characteristics of a semiconductor microtube ring resonator
Keywords: 78.66.Fd; 78.67.De; 42.82.Cr; 42.55.SaMicrocavity; Microtube; Directional emission
Surface phonon polariton of wurtzite GaN thin film grown on cc-plane sapphire substrate
Keywords: 71.36.+c; 78.20.–e; 78.30.Fs; 78.66.Fd; 78.68.+mA. Gallium nitride; A. Thin films; D. Surface phonon polariton; E. Attenuated total reflection spectroscopy
MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
Keywords: 73.21.Fg; 78.55.Cr; 78.66.Fd; 78.67.DeA3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. InAlGaN
Investigation of InGaAsP-based solar cells for double-junction photovoltaic devices
Keywords: 71.20.Nr; 78.66.Fd; 84.60.JtInGaAsP; Solar cells; Design; Fabrication; Assessment
Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot
Keywords: 73.21.La; 71.55.-i; 78.66.Fd; Quantum dot; Hydrogenic impurity; Hydrostatic pressure;
Theoretical study of the optical absorption and refraction index change in a cylindrical quantum dot
Keywords: 73.21.La; 78.66.Fd; 78.67.-nSemiconductor quantum dot; Optical absorption coefficient; Refraction index change; Intraband relaxation
Growth of InxGa1-xN/GaNInxGa1-xN/GaN QW structures with high indium concentration on cc-plane and mm-plane surfaces by MOVPE
Keywords: 78.55.Cr; 78.66.Fd; 78.67.DeA2. Low press. metalorganic vapor phase epitaxy; A2. Quantum wells; B1. Nitrides
Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires
Keywords: 78.66.Fd; 67.55.Lf; 73.63.BdSemiconductors; InN; Nanowires
Optical properties of InAs/In0.15Ga0.85As quantum dots-in-a-well studied by piezomodulated reflectance spectroscopy
Keywords: 78.55.Cr; 78.66.Fd; 78.67.HC; Piezomodulated reflectance; Dots-in-a-well; Photoluminescence; Molecular beam epitaxy;
In situ monitoring of periodic structures during MOVPE of III-nitrides
Keywords: 78.20.Ci; 78.66.Fd; 79.60.Jv; 81.15.Gh; 81.70.Fy; 61.10.Nz; A1. In situ characterization; A1. Laser reflectometry; A1. Periodic structures; A1. X-ray diffraction; B1. MOCVD; B3. Nitride semiconductors;
AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response
Keywords: 78.40.Fy; 78.20.Bh; 78.66.Fd; 81.05.Ea; 81.70.FyReflectometry; InGaAs; AP-MOVPE; Refractive index
Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE
Keywords: 81.15.Gh; 07.79.Lh; 61.10.Nz; 78.66.Fd; 78.40.FyA1. Crystal morphology; A1. Atomic force microscopy; A1. High-resolution X-ray diffraction; A2. Metalorganic vapor phase epitaxy; B2. Semiconducting III–V materials
Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition
Keywords: 68.55.Jk; 68.55.Ln; 78.60.Hk; 78.66.Fd; 81.15.GhA1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Phosphors; B2. Semiconducting aluminum compounds
Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy
Keywords: 68.55.Ln; 78.20.Jq; 78.30.Fs; 78.40.Fy; 78.66.Fd; 81.15.GhA1. Doping; A1. Reflectance anisotropy spectroscopy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting III–V materials
Indium incorporation effects on luminescence mechanisms in quaternary AlInGaN layers
Keywords: 78.47.+p; 78.55.-m; 78.66.fd; 81.15.Gh; A. Semiconductors; D. Optical properties; E. Luminescence; E. Time-resolved optical spectroscopies;
Light up-conversion mechanism of ZnSe–ZnTe superlattices
Keywords: 78.66.Fd; 78.67.DeA1. Superlattices; A1. Up-conversion; B1. ZnSe–ZnTe
MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength
Keywords: 78.66.Fd; 78.60.Fi; 61.72.Vv; A3. Molecular beam epitaxy; B1. Arsenides; B1. Phosphides; B2. Semiconducting III-V materials;
Influence of interface interruption on spin relaxation in GaAs (1 1 0) quantum wells
Keywords: 78.66.Fd; 81.15.Hi; 73.50.−hA1. X-ray diffraction; A3. Molecular-beam epitaxy; A3. Quantum wells
Self-assembled and fluorescence enhancement of semiconductor nanoparticles induced by surfactant adsorption
Keywords: 78.66.Fd; 78.67.Bf; Semiconductor nanoparticles; Photoluminescence enhancement; Blue shift; Surfactant adsorption;
Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition
Keywords: 78.55.Cr; 78.66.Fd; 68.65.+G; 81.15.GhA3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III–V materials
Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity
Keywords: 85.60.Gz; 78.66.Fd; 78.67.Pt
Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy
Keywords: 61.72.Ff; 68.37.Lp; 78.66.Fd; 81.15.KkA1. Transmission electron microscopy; A3. Metalorganic vapor-phase epitaxy; B2. InGaAsN; B2. InGaAs pseudo-lattice-matched substrate; B3. Multijunction (MJ) solar cells