کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795039 1023713 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence emissions both in the visible and infrared spectra from thin, uncapped InN deposits
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Photoluminescence emissions both in the visible and infrared spectra from thin, uncapped InN deposits
چکیده انگلیسی

Thin, uncapped InN deposits on GaN buffer layers are grown and subsequently annealed in a metal organic chemical vapor deposition reactor. Atomic force microscopy imaging of the InN surface reveals a sudden transition from a two- to a three-dimensional structure with increasing growth time. Strong room-temperature photoluminescence is observed from the InN, with peak emissions in the 2.2–3.1 eV and 0.7–0.9 eV ranges. High-energy emissions are shown to be associated with a two-dimensional InN wetting layer, red shifting with increasing growth time and blue shifting with increasing annealing time. Low-energy emissions near the purported bulk energy gap of InN emerge in deposits with well-developed three-dimensional islands, but disappear when these islands are removed during the process of annealing.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 2, 1 January 2009, Pages 254–257
نویسندگان
, ,