Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Adsorption; A2. Surface processes; A3. Chemical vapor deposition processes; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; B1. Nitrides;
مقالات ISI A3 رسوبات بخار شیمیایی فلزات (ترجمه نشده)
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Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Characterization; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; B1. Gallium compounds; B1. Oxides;
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Characterization; A1. X-ray microdiffraction; A3. Metalorganic chemical vapor deposition; B1. Nitride; B2. Semiconductor III-V materials; B2. Piezoelectric materials;
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting aluminum compounds
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Nucleation islands; A1. Surface structure; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B2. Semiconducting aluminum compounds;
Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Crystal morphology; A1. Desorption; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Growth of pure wurtzite InAs nanowires over a wide diameter range
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. Nanomaterials; B2. Semiconducting III-V materials;
Heterointerface study of InAs/GaSb nanoridge heterostructures grown by metal organic chemical vapor deposition on V-grooved Si (0â¯0â¯1) substrates
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Heteroepitaxy; A3. Metalorganic chemical vapor deposition; B1. Indium arsenide; B1. Gallium antimonide;
Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. X-ray diffraction; A1. Stresses; A3. Metalorganic chemical vapor deposition; B2. Semiconductor III-V materials;
Influence of surface step width of 4H-SiC substrates on the GaN crystal quality
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Atomic force microscopy; A1. Nucleation; A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as single source precursor
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; B1. Bismuth compounds; B1. Tellurides; B1. Nanomaterials; B2. Semiconducting materials;
Analysis of InAsSb/GaAs submonolayer stacks
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Adsorption; A1. Characterization; A1. Photoluminescence; A1. X-ray fluorescence; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III-V materials;
The role of hydrogen in carbon incorporation and surface roughness of MOCVD-grown thin boron nitride
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; A3. Hot wall epitaxy; B1. Boron nitride epitaxy A1.SIMS characterization; A1. Surface morphology;
Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Nucleation; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. X-ray diffraction; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; A3. Superlattices; B1. Antimonides; B3. Infrared devices;
Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors
Keywords: A3 رسوبات بخار شیمیایی فلزات; B1. Nitrides; A3. Metalorganic chemical vapor deposition; B3. Photodetectors; A1. Screw dislocations;
Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Nanowires; A1. Surfaces; A3. Metalorganic chemical vapor deposition; A3. Selective-area growth; B1. Nanomaterials; B2. InAs;
Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. High resolution X-ray diffraction; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Water splitting photoelectrode;
Near ultraviolet light emitting diodes using ZnMgO:N/ZnO hetero-junction grown by MOVPE
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1: Doping; A3. Metalorganic chemical vapor deposition; B1: Oxides; B2: Semiconducting II-VI materials; B3: Light emitting diodes;
Growth of high purity N-polar (In,Ga)N films
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Impurities; A1. Polarity; A1. N-polar; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Oxides; B2. Dielectric materials;
Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Defects; A3. Metalorganic chemical vapor deposition; A3. Quantum dots; B2. Semiconducting III-V materials;
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; B2. III/V-on-Si; A1. Reflectance anisotropy spectroscopy; A1. In-diffusion; A1. Surface structure; B3. P-n junction;
Growth by MOCVD of In(Ga)AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; B2. Semiconducting ternary compounds; B2. Semiconducting indium compounds; B2. Semiconducting quarternary alloys; B1. Nitrides; A1. Atomic force microscopy;
In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B2. Semiconducting III-V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting indium gallium phosphide; B3. Solar cells;
Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Etching; A1. Surface processes; A1. High resolution X-ray diffraction; A2. Superlattices; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Coating; A3. Chemical vapor deposition processes; A3. Metalorganic chemical vapor deposition; B1. Tantalum carbide; B2. Semiconducting gallium compounds; B2. Semiconducting silicon compounds;
(GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials; B2. Semiconducting gallium arsenide;
Semipolar (202Ì
1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect
Keywords: A3 رسوبات بخار شیمیایی فلزات; B3. Light emitting diodes; B2. Semiconducting III-V materials; A3. Metalorganic chemical vapor deposition; A1. Doping;
High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Defect; A3. Selective epitaxy; A3. Metalorganic chemical vapor deposition; A3. Superlattices; B2. Semiconducting III-V materials;
Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Growth models; A1.Defects; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III-V materials;
Mechanism of stress control for GaN growth on Si using AlN interlayers
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Atomic force microscopy; A1. Interfaces; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Copper iodide synthesized by iodization of Cu-films and deposited using MOCVD
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; B1. Halides; B2. Semiconducting materials;
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; A1. Defects;
Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic vapor phase epitaxy; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; A1. Heat transfer; B1. Nitrides;
Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Characterization; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Mass transfer; A1. Nonlinearity; A1. Arrhenius plot; A3. Metalorganic chemical vapor deposition; A3. Film uniformity; B1. Gallium nitride;
Electrical properties of GaN-based heterostructures adopting InAlN/AlGaN bilayer barriers
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Current mapping of nonpolar a-plane and polar c-plane GaN films by conductive atomic force microscopy
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials
Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Nanostructures; A1. Stresses; A1. Si substrates; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Nanostructures; A1. Etching; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Nitride; B2. Semiconducting gallium compounds
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Atomic force microscopy; A1. Photoluminescence; A3. Quantum dots; A3. Metalorganic chemical vapor deposition; B2. Semiconducting quarternary alloys
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Defects; A1. Stresses; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials
Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVD
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Titanium compounds; B2. Semiconducting materials
Reconciling results of MOCVD of a CNT composite with equilibrium thermodynamics
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Growth models; A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. Nanomaterials; B1. Oxides
MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Atomic force microscopy; A1. Hexagonal hillock; A1. Polarity; A3. Metalorganic chemical vapor deposition; B1. Nitrides
Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates
Keywords: A3 رسوبات بخار شیمیایی فلزات; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III-V materials; B1. Nitrides; A1. Microstructures; A3. Selective epitaxy; A1. Non-polar crystal structure
Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes
Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Planar defects; A3. Metalorganic chemical vapor deposition; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials;
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. Phase stability; A3. Atomic layer epitaxy; A3. Metalorganic Chemical Vapor Deposition; B1. Oxides;; B2. Semiconducting gallium compounds;