کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8148381 1524333 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers
چکیده انگلیسی
High quality In0.30Ga0.70As layers on GaAs substrates were obtained using compositional undulating step-graded Ga1-xInxP (x = 0.48-0.78) buffers grown by metal-organic chemical vapor deposition. The density of threading dislocation is about 4.0 × 106 cm−2 and the root-mean-square roughness is only 5.20 nm, which is much better than those grown on the conventional step-graded metamorphic buffer. On one hand, the reversed GaInP layers reduce the distribution imbalance of α dislocations between the (1 1 1) and (−1 −1 1) slip planes, which promote dislocation glide. On the other hand, the inserted tensile strained GaInP layers change the direction of dislocation glide and facilitate dislocation annihilations, which effectively confine the threading dislocations in the buffer. Overall, this work provides a promising way to obtain virtual substrates for the achievement of desired metamorphic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 496–497, August–September 2018, Pages 31-35
نویسندگان
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