Keywords: A1 استرس; A1. Defects; A1. Stresses; A1. Surface structure; A3. Chemical vapor deposition processes; B2. Germanium silicon alloys;
مقالات ISI A1 استرس (ترجمه نشده)
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Keywords: A1 استرس; B1. Diamond; A1. Defects; A1. Characterisation; A2. Growth from high temperature solution; A1. Recrystallisation; A1. Stresses;
Keywords: A1 استرس; A1. Computer simulation; A1. Directional solidification; A1. Stresses; B3. Solar cells;
Keywords: A1 استرس; A1. Stresses; A1. Defects; A1. X-ray topography; A2. Stepanov method; A2. Edge defined film fed growth; B1. Sapphire;
Keywords: A1 استرس; A1. Computer simulation; A1. Line defects; A1. Stresses; B2. Semiconducting silicon;
Keywords: A1 استرس; A1. Computer simulation; A1. Fluid flows; A1. Heat transfer; A1. Magnetic fields; A1. Stresses; A2. Growth from melt;
Keywords: A1 استرس; A1. Stresses; A1. Surfaces; A2. Traveling solvent zone growth; B1. Thallium halides; B2. Halide semiconductors; B3. Radiation detectors;
Keywords: A1 استرس; A1. Computer simulation; A1. Line defects; A1. Stresses; A2. Bridgman technique; B2. Semiconducting silicon;
Keywords: A1 استرس; A1. Crystal morphology; A1. Growth models; A1. Morphological stability; A1. Stresses;
Keywords: A1 استرس; A1. Computer simulation; A1. Stresses; A1. Dislocation density; A1. Defects; A1. Directional solidification
Keywords: A1 استرس; A1. High resolution x-ray diffraction; A1. Nanobeam electron diffraction; A1. Stresses; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting germanium
Keywords: A1 استرس; A1. Computer simulation; A1. Line defects; A1. Stresses; A2. Growth from melt; B2. Semiconducting silicon
Keywords: A1 استرس; A1. Characterization; A1. Stresses; B1. Germanium silicon alloys
Keywords: A1 استرس; A1. Directional solidification; A1. Heat transfer; A1. Interfaces; A1. Stresses; A2. Quasi-single crystal growth;
Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure
Keywords: A1 استرس; B1. Silicon carbide; B1. Oxides; A1. Interface state density; A1. Stresses; A1. Infrared spectroscopy;
Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers
Keywords: A1 استرس; A1. X-ray diffraction; A1. Stresses; A3. Metalorganic chemical vapor deposition; B2. Semiconductor III-V materials;
Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses
Keywords: A1 استرس; A1. Stresses; A1. Line defects; A3. Liquid phase epitaxy; B1. Germanium silicon alloys;
Thermal stress simulation of optimized SiC single crystal growth crucible structure
Keywords: A1 استرس; B2. SiC; A2. Growth from vapor; A1. Computer simulation; A1. Heat transfer; A1. Stresses;
Atomic structures of Ruddlesden-Popper faults in LaCoO3/SrRuO3 multilayer thin films induced by epitaxial strain
Keywords: A1 استرس; A1. Crystal structure; A1. Defects; A1. Stresses; A3. Thin film growth; B2. Magnetic materials; A1. Scanning transmission electron microscopy;
Effect of power history on the shape and the thermal stress of a large sapphire crystal during the Kyropoulos process
Keywords: A1 استرس; A1. Computer simulation; A1. Heat transfer; A1. Stresses; A2. Kyropoulos method; A2. Single crystal growth; B1. Sapphire;
Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds
Keywords: A1 استرس; A1. Defects; A1. Stresses; A2. Single crystal growth; A3. Vapor phase epitaxy; B1. Nitride; B2. Semiconducting III-V materials;
Comparison of thermal stress computations in Czochralski and Kyropoulos growth of sapphire crystals
Keywords: A1 استرس; A1. Stresses; A1. Computer simulation; A2. Kyropoulos method; B1. Sapphire;
Study on the usage of a commercial software (Comsol-Multiphysics®) for dislocation multiplication model
Keywords: A1 استرس; A1. Line defects; A1. Directional solidification; A1. Stresses; A2. Growth from melt; B2. Semiconducting silicon;
Role of 2Ã1 surface reconstruction on Stranski-Krastanov growth illustrated using a modified solid-on-solid model
Keywords: A1 استرس; A1. Computer Simulation; A1. Roughening; A1. Stresses; A1. Surface Processes; A3. Molecular beam epitaxy; B1. Germanium silicon alloys;
Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate
Keywords: A1 استرس; A1. Stresses; A1. Surface structure; A1. Line defects; A1. Atomic force microscopy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials;
Strain and anisotropy effects studied in InAs/GaAs(2Â 2Â 1) quantum dashes by Raman spectroscopy
Keywords: A1 استرس; A1. Nanostructures; A1. Stresses; A1. Crystal structure; A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process
Keywords: A1 استرس; A1. Computer simulation; A1. Mass transfer; A1. Stresses; A3. Chemical vapor deposition; A3. Hydride Vapor Phase Epitaxy; B1. Aluminum nitride;
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
Keywords: A1 استرس; A1. Stresses; A2. Czochralski method; A2. Floating zone technique; B2. Semiconducting silicon;
Study on the local stress induced dislocations on (1¯1¯1¯) Te face of CdTe-based crystals
Keywords: A1 استرس; A1. Crystal structure; A1. Defects; A1. Stresses; A1. Dislocations; B2. Semiconducting II-VI materials; B2. CdZnTe;
Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography
Keywords: A1 استرس; A1. Nanostructures; A1. Stresses; A1. Si substrates; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells
Keywords: A1 استرس; A1. Stresses; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III–V materials
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults
Keywords: A1 استرس; A1. Defects; A1. Stresses; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials
Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon
Keywords: A1 استرس; A1. Defects; A1. Stresses; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting gallium arsenide
Peculiarities of strain relaxation in linearly graded InxGa1âxAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy
Keywords: A1 استرس; A1. Crystal structure; A1. Stresses; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties
Keywords: A1 استرس; A1. Stresses; A1. Substrates; A3. Metalorganic chemical vapor deposition; A3. Solid phase epitaxy; B2. Semiconducting III-V materials; B3. Light emitting diodes;
c-plane ZnO on a -plane sapphire: Inclusion of (11¯01) domains
Keywords: A1 استرس; A1. Electron backscatter diffraction; A1. High resolution X-ray diffraction; A1. Numerical simulation; A1. Stresses; A3. Chemical vapor deposition processes; B2. Semiconducting II–VI materials
In-line correlation and ordering of InAs/GaAs multistacked Quantum Dots structures
Keywords: A1 استرس; A1. Low dimensional structures; A1. Stresses; A3. Selective epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials
Anisotropy of strain relaxation in heterogeneous GaInNAs layers grown by AP-MOVPE
Keywords: A1 استرس; A1. Stresses; A1. Crystal structure; A1. Line defects; A1. High resolution X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III–V materials
Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates
Keywords: A1 استرس; A1. Stresses; A1. Nanobeam electron diffraction; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting gallium arsenide
Interface effect on structural and optical properties of type II InAs/GaSb superlattices
Keywords: A1 استرس; A1. Interface; A1. Low dimensional structures; A1. Stresses; A3. Molecular beam epitaxy; B1. Antimonides
High quality crack-free GaN film grown on si (1 1 1) substrate without AlN interlayer
Keywords: A1 استرس; A1. Stresses; A1. Substrates; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III–V materials
Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate
Keywords: A1 استرس; A1. Characterization; A1. Doping; A1. Stresses; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials
The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates
Keywords: A1 استرس; A1. Organometallic vapor phase epitaxy; A1. Stresses; A1. Substrates; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model
Keywords: A1 استرس; A1. Computer simulation; A1. Line defects; A1. Stresses; A2. Growth from vapor;
Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structures
Keywords: A1 استرس; A1. Stresses; A1. Dislocations; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III-V solar cell applications
Keywords: A1 استرس; A1. Stresses; A3. Metalorganic vapor phase epitaxy; B1. Phospides; B2. Semiconducting III-V materials; B3. Solar cells;
Thermal and stress distributions in larger sapphire crystals during the cooling process in a Kyropoulos furnace
Keywords: A1 استرس; A1. Stresses; A1. Computer simulation; A1. Heat transfer; A2. Single crystal growth; A2. Kyropoulos method; B1. Sapphire
Anisotropic study of thermal stresses induced by diameter fluctuation during Czochralski silicon single crystal growth
Keywords: A1 استرس; A1. Computer simulation; A1. Stresses; A2. Czochralski method; A2. Single crystal growth; B1. Semiconducting silicon
Onset of plastic relaxation in semipolar (112¯2) InxGa1âxN/GaN heterostructures
Keywords: A1 استرس; A1. Interfaces; A1. Line defects; A1. Stresses; A3. Metalorganic vapor phase epitaxy; B1. Nitrides;
Effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on GaAs substrate
Keywords: A1 استرس; A1. Atomic force microscopy; A1. Stresses; A3. Metalorganic chemical vapor deposition; B2. Semiconductor III-V materials;