کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148640 | 1524341 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si
ترجمه فارسی عنوان
ارزیابی تکنیک رشد / تکه کردن برای تولید بافرهای آرام بافت ژیروسکوپ بر روی سی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
Thick Ge layers grown on Si(0â¯0â¯1) are handy for the production of GeOI wafers, as templates for the epitaxy of III-V and GeSn-based heterostructures and so on. Perfecting their crystalline quality would enable to fabricate suspended Ge micro-bridges with extremely high levels of tensile strain (for mid IR lasers). In this study, we have used a low temperature (400â¯Â°C)/high temperature (750â¯Â°C) approach to deposit with GeH4 various thickness Ge layers in the 0.5â¯Âµm - 5â¯Âµm range. They were submitted afterwards to short duration thermal cycling under H2 (in between 750â¯Â°C and 875-890â¯Â°C) to lower the Threading Dislocation Density (TDD). Some of the thickest layers were partly etched at 750â¯Â°C with gaseous HCl to recover wafer bows compatible with device processing later on. X-ray Diffraction (XRD) showed that the layers were slightly tensile-strained, with a 104.5-105.5% degree of strain relaxation irrespective of the thickness. The surface was cross-hatched, with a roughness slightly decreasing with the thickness, from 2.0 down to 0.8â¯nm. The TDD (from Omega scans in XRD) decreased from 8â¯Ãâ¯107 cmâ2 down to 107 cmâ2 as the Ge layer thickness increased from 0.5 up to 5â¯Âµm. The lack of improvement when growing 5â¯Âµm thick layers then etching a fraction of them with HCl over same thickness layers grown in a single run was at variance with Thin Solid Films 520, 3216 (2012). Low temperature HCl defect decoration confirmed those findings, with (i) a TDD decreasing from slightly more 107 cmâ2 down to 5â¯Ãâ¯106 cmâ2 as the Ge layer thickness increased from 1.3 up to 5â¯Âµm and (ii) no TDD hysteresis between growth and growth then HCl etch-back.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 488, 15 April 2018, Pages 43-50
Journal: Journal of Crystal Growth - Volume 488, 15 April 2018, Pages 43-50
نویسندگان
J.M. Hartmann, J. Aubin,