Keywords: A1 ساختار سطح; A1. Defects; A1. Stresses; A1. Surface structure; A3. Chemical vapor deposition processes; B2. Germanium silicon alloys;
مقالات ISI A1 ساختار سطح (ترجمه نشده)
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Keywords: A1 ساختار سطح; A1. Crystal morphology; A1. Diffusion; A1. Mass transfer; A1. Surface structure; A1. Surface processes; B2. Semiconducting materials;
Keywords: A1 ساختار سطح; Cubic aluminium nitride; Properties; Synthesis; Metastable modifications; Thermal conductivity; A1. Nucleation; A1. Surface structure; B1. Nitrides; A3. Chemical vapour deposition processes;
Keywords: A1 ساختار سطح; A1. Growth models; A1. Morphological stability; A1. Surface processes; A1. Surface structure; A2. Growth from vapor; B2. Semiconducting silicon;
Keywords: A1 ساختار سطح; A1. Crystal morphology; A1. Diffusion; A1. Mass transfer; A1. Surface structure; A1. Surface processes; B2. Semiconducting materials;
Keywords: A1 ساختار سطح; A1. Atomic force microscopy; A1. Computer simulation; A1. Diffusion; A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides;
Keywords: A1 ساختار سطح; A1. Nucleation islands; A1. Surface structure; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B2. Semiconducting aluminum compounds;
Keywords: A1 ساختار سطح; A1. Computer simulation; A1. Surface structure; A2. Growth from melt; B2. Semiconducting silicon
Keywords: A1 ساختار سطح; A1. Additive; A1. Dendrites; A1. Surface structure; A2. Growth from solutions; A2. Single crystal growth; B1. Potassium compounds;
Efficiency improvement of TiO2 nanowire arrays based dye-sensitized solar cells through further enhancing the specific surface area
Keywords: A1 ساختار سطح; A1. Nanostructures; A1. Surface structure; A1. Surface processes; B1. Oxides; B2. Semiconducting materials; B3. Solar cells;
Growth optimization and electronic structure of ultrathin CoO films on Ag(001): A LEED and photoemission study
Keywords: A1 ساختار سطح; A1. Surface structure; A1. Interfacial states; A3. Molecular beam epitaxy; B1. Oxides;
Influence of surface step width of 4H-SiC substrates on the GaN crystal quality
Keywords: A1 ساختار سطح; A1. Atomic force microscopy; A1. Nucleation; A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Mn induced 1â¯Ãâ¯2 reconstruction in the Ï-MnAl(0â¯0â¯1) surface
Keywords: A1 ساختار سطح; A1. Computer simulation; A1. Surface structure; A3. Nitrides; B2. Magnetic materials;
Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy
Keywords: A1 ساختار سطح; A1. Growth models; A1. Surface structure; A1. Mass transfer; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Comparative study of ZnO thin film and nanopillar growth on YSZ(1Â 1Â 1) and sapphire (0Â 0Â 0Â 1) substrates by pulsed laser deposition
Keywords: A1 ساختار سطح; A1. Substrates; A1. Nanostructures; A1. Morphological stability; A1. Surface structure; A3. Laser epitaxy; B1. Oxides;
Interactions between Sb and As on InAs(0â¯0â¯1) surfaces
Keywords: A1 ساختار سطح; A1. Surface structure; A1. Phase diagrams; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
Top-seeded solution growth and morphology change of RbTiOPO4:Ta single crystal
Keywords: A1 ساختار سطح; A1. Doping; A2. Single crystal growth; A1. Crystal morphology; A1. Surface structure;
Reconstruction phase transition c(4Ã4) - (1Ã3) on the (001)InSb surface
Keywords: A1 ساختار سطح; A1. Reflection high energy electron diffraction; A1. Surface structure; A1. Phase transition; B1. InSb;
Effects of fabrication method of Al2O3 buffer layer on Rh-catalyzed growth of single-walled carbon nanotubes by alcohol-gas-source chemical vapor deposition
Keywords: A1 ساختار سطح; A1. Absorption; A1. Atomic force microscopy; A1. Nanostructures; A1. Surface structure; A3. Chemical vapor deposition processes; B1. Nanomaterials;
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient
Keywords: A1 ساختار سطح; A3. Metalorganic chemical vapor deposition; B2. III/V-on-Si; A1. Reflectance anisotropy spectroscopy; A1. In-diffusion; A1. Surface structure; B3. P-n junction;
Atomistic behaviour of (nÃ3)-reconstructed areas of InAs-GaAs(001) surface at the growth condition
Keywords: A1 ساختار سطح; A1. Surface structure; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting indium compounds;
Invariance of multifractal spectrums of spatial forms on the surface of ZnxCd1-xTe - Si heterocompositions synthesized by electron beam epitaxy and hot wall epitaxy
Keywords: A1 ساختار سطح; A1. Multifractal analysis; A1. Self-similarity and self-organization; A1. Surface structure; B1. Nanomaterials; B2. II-VI semiconductor materials;
Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents
Keywords: A1 ساختار سطح; A1. Roughening; A1. Solvents; A1. Surface structure; A2. Growth from solution; B1. Silicon carbide;
Growth of GaP and AlGaP on GaP(1Â 1Â 1)B using gas-source molecular-beam-epitaxy
Keywords: A1 ساختار سطح; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; A1. Roughening; A1. Morphological stability; A1. Surface structure;
Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate
Keywords: A1 ساختار سطح; A1. Stresses; A1. Surface structure; A1. Line defects; A1. Atomic force microscopy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials;
Miscut dependent surface evolution in the process of N-polar GaN(0001¯) growth under N-rich condition
Keywords: A1 ساختار سطح; A1. Diffusion; A1. Growth models; A1. Surface structure; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces
Keywords: A1 ساختار سطح; A3. Migration enhanced epitaxy; A1. Reflection high energy electron diffraction; A1. Surface processes; A1. Surface structure; B2. Semiconducting gallium arsenide; A3. Molecular beam epitaxy;
Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
Keywords: A1 ساختار سطح; A1. Defects; A1. Surface structure; A2. Growth from vapor; B2. Semiconducting materials;
Features of YAG crystal growth under Ar+CO reducing atmosphere
Keywords: A1 ساختار سطح; A1. Surface structure; A2. Czochralski method; A2. Single crystal growth; B1. Oxides; B2. Dielectric materials
Growth and structure of Cd1–xDyxTe crystals
Keywords: A1 ساختار سطح; A1. Surface structure; A2. Bridgman technique; B1. Rare earth compounds; B2. Semiconducting II–VI materials
Narrow growth window for stoichiometric, layer-by-layer growth of LaAlO3 thin films using pulsed laser deposition
Keywords: A1 ساختار سطح; A1. Defects; A1. Surface structure; A3. Laser epitaxy; B1. Oxides; B1. Perovskites; B2. Dielectric materials
III–V site-controlled quantum dots on Si patterned by nanoimprint lithography
Keywords: A1 ساختار سطح; A1. Nanostructures; A1. Characterization; A1. Surface structure; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting silicon
Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100)
Keywords: A1 ساختار سطح; A1. Nucleation; A1. Surface structure; A3. Organometallic vapor phase epitaxy; B2. Semiconducting silicon; B2. Semiconducting III-V materials; B3. Solar cells;
Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation
Keywords: A1 ساختار سطح; A1. Surface structure; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting materials
Kinetics and thermodynamics of Si(111) surface nitridation in ammonia
Keywords: A1 ساختار سطح; A1. Reflection high-energy electron diffraction; A1. Surface structure; A1. Surface processes; A1. Adsorption; A3. Molecular beam epitaxy; B1. Nitrides
Formation of V-grooves in SrRuO3 epitaxial film
Keywords: A1 ساختار سطح; A1. Surface structure; A1. Line defects; A1. Transmission electron microscopy; A1. Growth models; B1. Perovskites; B1. SrRuO3 epitaxial films;
Growth and characterization of ultrathin epitaxial MnO film on Ag(001)
Keywords: A1 ساختار سطح; A1. Surface structure; A1. Characterization; A3. Molecular beam epitaxy; B1. Oxides;
Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN
Keywords: A1 ساختار سطح; A3. Metal organic chemical vapor deposition; B1. Nitrides; B2. Dielectric materials; A1. Surface structure;
Multifractal spectrums for volumes of spatial forms on surface of ZnxCd1âxTe-Si (111) heterostructures and estimation of the fractal surface energy
Keywords: A1 ساختار سطح; A1. Multifractal analysis; A1. Self-similarity and self-organization; A1. Surface structure; B1. Nanomaterials; B2. II-VI Semiconductor materials;
Influence of (7Ã7)-“1Ã1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)
Keywords: A1 ساختار سطح; A1. Growth models; A1. Surface structure; A3. Molecular beam epitaxy; B1. Silicon;
Surface studies, structural characterization and quantity determination of PbSe nanocrystals deposited by chemical bath deposition technique
Keywords: A1 ساختار سطح; A1. Characterization; A1. Rutherford backscattering; A1. Surface structure; A2. Growth from solution; B1. Nanomaterial; B2. Semiconducting lead compounds
Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution
Keywords: A1 ساختار سطح; A1. Roughening; A1. Surface structure; A2. Growth from solution; A2. Top seeded solution growth; B1. Silicon carbide
Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy
Keywords: A1 ساختار سطح; A1. Reflection high – energy electron diffraction; A1. Surface structure; A1. Surface processes; B1. Nitrides
Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts
Keywords: A1 ساختار سطح; A1. Substrates; A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; B3. Light emitting diodes
Heterointegration of III-V on silicon using a crystalline oxide buffer layer
Keywords: A1 ساختار سطح; A1. Reflection high energy electron diffraction; A1. Surface structure; A3. Molecular beam epitaxy; B1. Perovskites; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices;
Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy
Keywords: A1 ساختار سطح; A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
X-ray photoelectron spectroscopy and diffraction investigation of a metal-oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)
Keywords: A1 ساختار سطح; A3. Molecular beam epitaxy; A1. Surface structure; B1. Oxides; B1. Metals; B1. Nanomaterials;
Attainment of unstable β nucleation of glycine in presence of l-tyrosine and its analytical interpretation—A combined approach
Keywords: A1 ساختار سطح; A1. Crystal Morphology; A1. Nucleation; A1. Surface structure; A2. Growth from solutions; B1 Organic compounds
Growth of CdWO4 crystals by the low thermal gradient Czochralski technique and the properties of a (010) cleaved surface
Keywords: A1 ساختار سطح; A1. Atomic force microscopy; A1. Surface structure; A2. Czochralski method; B1. Cadmium compounds; B1. Tungstates
Unique surface structure formations on a Ge-covered Si(110)-16×2 surface
Keywords: A1 ساختار سطح; A1. Nanostructures; A1. Surface structure; A1. Scanning tunneling microscopy; B1. Germanium silicon alloys; B2. Semiconducting silicon