کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489156 | 1524352 | 2017 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces
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کلمات کلیدی
A1. Surface structure - A1 ساختار سطحA1. Surface processes - A1 فرایندهای سطحA1. Reflection high energy electron diffraction - A1 پراش الکترونی انرژی بالا بازتابA3. Molecular Beam Epitaxy - A3 اپیتاکسی پرتوهای مولکولیA3. Migration enhanced epitaxy - A3 مهاجرت epitaxy افزایش یافته استB2. Semiconducting gallium arsenide - B2 آرسنید گالیوم نیمه هادی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigate the behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces by the intensity measurement of the specular spot of the reflection high-energy electron diffraction. Characteristics of these two surfaces are very different. For (111)B surface, we reveal that the deposited Ga atoms fill the Ga vacancy of 19Ã19 reconstruction until the surface is fully covered by one mono-layer of Ga. Excess atoms deposited on the fully covered surface form droplets and act as a Ga source during the recovery process. The surface recovers initial condition by supplying As. Alternate formation of As-stabilized and Ga-stabilized surfaces controlled by growth sequence enables the migration-enhanced epitaxy on the GaAs (111)B surface. For (111)A surface, in contrast, the stable surface is 2Ã2 reconstruction even under As irradiation. Deposition of Ga only forms droplets on the surface. The MEE mode growth is not suitable on this surface since As-stabilized surface is hard to form.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 25-29
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 25-29
نویسندگان
A. Kawaharazuka, Y. Horikoshi,