Keywords: A1 فرایندهای سطح; A3. Selective epitaxy; B2. Semiconducting silicon; A1. Surface processes; A1. Density functional theory calculation; A1. Thermodynamic calculation;
مقالات ISI ترجمه شده A1 فرایندهای سطح
مقالات ISI A1 فرایندهای سطح (ترجمه نشده)
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Keywords: A1 فرایندهای سطح; A1. Growth models; A1. Nanostructures; A1. Surface processes; B2. Semiconducting IV materials;
Keywords: A1 فرایندهای سطح; A1. Crystal morphology; A1. Diffusion; A1. Mass transfer; A1. Surface structure; A1. Surface processes; B2. Semiconducting materials;
Keywords: A1 فرایندهای سطح; A1. Growth models; A1. Morphological stability; A1. Surface processes; A1. Surface structure; A2. Growth from vapor; B2. Semiconducting silicon;
Keywords: A1 فرایندهای سطح; A1. Crystal morphology; A1. Diffusion; A1. Mass transfer; A1. Surface structure; A1. Surface processes; B2. Semiconducting materials;
Keywords: A1 فرایندهای سطح; A1. Surface processes; A1. Mass transfer; A1. Diffusion; B2. Semiconducting silicon;
Keywords: A1 فرایندهای سطح; A1. Growth models; A1. Nanostructures; A1. Surface processes; A3. Molecular beam epitaxy;
Efficiency improvement of TiO2 nanowire arrays based dye-sensitized solar cells through further enhancing the specific surface area
Keywords: A1 فرایندهای سطح; A1. Nanostructures; A1. Surface structure; A1. Surface processes; B1. Oxides; B2. Semiconducting materials; B3. Solar cells;
Overcoming Ehrlich-Schwöbel barrier in (1â¯1â¯1)A GaAs molecular beam epitaxy
Keywords: A1 فرایندهای سطح; B2. Semiconducting gallium arsenide; A3. Molecular beam epitaxy; A1. Surface processes; A1. Atomic force microscopy; A1. Diffusion; A1. Nucleation; A1. Recrystallization;
Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE
Keywords: A1 فرایندهای سطح; A3. Metalorganic vapour phase epitaxy; B1. Antimonides; B1. Gallium compounds; A1. Nanostructures; A1. Atomic force microscopy; A1. Surface processes;
Kinetics of solution crystal growth of strengite, FePO4,2H2O
Keywords: A1 فرایندهای سطح; A1. Surface processes; A2. Growth from solutions; B1. Minerals; B1. Iron compounds; B1. Phosphates;
X-ray characterization technique for the assessment of surface damage in GaN wafers
Keywords: A1 فرایندهای سطح; A1. Surface processes; A1. X-ray diffraction; A2. Growth from solutions; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting gallium compounds;
Effective diffusion length and elementary surface processes in the concurrent growth of nanowires and 2D layers
Keywords: A1 فرایندهای سطح; A1. Growth models; A1. Nanostructures; A1. Surface processes; A3. Molecular beam epitaxy;
GaAs quantum dot molecules filled into droplet etched nanoholes
Keywords: A1 فرایندهای سطح; A1. Nanostructures; A1. Surface processes; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Increase in silicon film deposition rate in a SiHCl3-SiHx-H2 system
Keywords: A1 فرایندهای سطح; A1. Surface processes; A1. Adsorption; A1. Desorption; A1. Growth models; A3. Chemical vapor deposition processes; B2. Semiconducting silicon;
Monitoring surface roughness during film growth using modulated RHEED intensity oscillations
Keywords: A1 فرایندهای سطح; 00-01; 99-00; A1. Reflection high-energy electron diffraction; A1. Surface processes; A3. Laser epitaxy; B1. Perovskites;
Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001) MBE growth
Keywords: A1 فرایندهای سطح; A1. Computer simulation; A1. Surface processes; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Role of 2Ã1 surface reconstruction on Stranski-Krastanov growth illustrated using a modified solid-on-solid model
Keywords: A1 فرایندهای سطح; A1. Computer Simulation; A1. Roughening; A1. Stresses; A1. Surface Processes; A3. Molecular beam epitaxy; B1. Germanium silicon alloys;
3D modeling of doping from the atmosphere in floating zone silicon crystal growth
Keywords: A1 فرایندهای سطح; A1. Computer simulation; A1. Convection; A1. Doping; A1. Surface processes; A2. Floating zone technique; B2. Semiconducting silicon;
Indium incorporation into InGaN: The role of the adlayer
Keywords: A1 فرایندهای سطح; A1. Surface processes; A3. Low press. metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III-V materials;
2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth
Keywords: A1 فرایندهای سطح; A1. Nucleation; A3. Molecular beam epitaxy; A1. Surface processes; A1. Morphological stability; B2. Semiconducting silicon;
Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures
Keywords: A1 فرایندهای سطح; A1. Etching; A1. Surface processes; A1. High resolution X-ray diffraction; A2. Superlattices; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces
Keywords: A1 فرایندهای سطح; A3. Migration enhanced epitaxy; A1. Reflection high energy electron diffraction; A1. Surface processes; A1. Surface structure; B2. Semiconducting gallium arsenide; A3. Molecular beam epitaxy;
Kinetics and thermodynamics of Si(111) surface nitridation in ammonia
Keywords: A1 فرایندهای سطح; A1. Reflection high-energy electron diffraction; A1. Surface structure; A1. Surface processes; A1. Adsorption; A3. Molecular beam epitaxy; B1. Nitrides
Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires
Keywords: A1 فرایندهای سطح; A1. Interfaces; A1. Surface processes; A3. Molecular beam epitaxy; B1. Nitrides; B1. Nanomaterials; B2. Semiconducting gallium compounds;
InAs nanostructures grown by droplet epitaxy directly on InP(001) substrates
Keywords: A1 فرایندهای سطح; A1: Diffusion; A1. Surface processes; A3. Molecular Beam Epitaxy; B1. Nanomaterials; B2. Semiconducting indium phosphide; Droplet Epitaxy
Scenarios of stable VaporâLiquid DropletâSolid Nanowire growth
Keywords: A1 فرایندهای سطح; A1. Growthmodels; A1. Nanostructures; A1. Surface processes; A1.Nucleation; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
The microstructure, optical and electrical property of CdZnTe thick films grown from a CSS method
Keywords: A1 فرایندهای سطح; A1. Surface processes; A3. Close-spaced sublimation; B2. CdZnTe; B2. Semiconducting II-VI materials; B3. Heterojunction semiconductor devices;
Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy
Keywords: A1 فرایندهای سطح; A1. Reflection high – energy electron diffraction; A1. Surface structure; A1. Surface processes; B1. Nitrides
Effects of cluster size on calculation of activation energies of silicon surface reactions with H2 and HCl
Keywords: A1 فرایندهای سطح; A1. Growth models; A1. Computer simulation; A1. Surface processes; A3. Chemical vapor deposition processes; B2. Semiconducting silicon;
Effect of antimony on growth mode and properties of thick InGaN layers
Keywords: A1 فرایندهای سطح; A1. Crystal morphology; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Nitrides; B2. Semiconducting III–V materials
Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells
Keywords: A1 فرایندهای سطح; A1. Surface processes; A3. Low press. metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III–V materials
Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: A new effect associated with the Fermi level position
Keywords: A1 فرایندهای سطح; A1. Computer simulation; A1. Surface processes; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Redox process catalysed by growing crystal—strengite, FePO4,2H2O, crystallizing from solution with iron(II) and hydroxylamine
Keywords: A1 فرایندهای سطح; A1. Nucleation; A1. Surface processes; A2. Growth from solutions; B1. Iron compounds; B1. Minerals; B1. Phosphates
Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers
Keywords: A1 فرایندهای سطح; A1. Surface processes; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials; B2. Semiconducting indium gallium phosphide; B3. Light emitting diodes
General aspects of the vapor growth of semiconductor crystals – A study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
Keywords: A1 فرایندهای سطح; A1. Computer simulation; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture
Keywords: A1 فرایندهای سطح; A1. Computer simulation; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Structure of initial Ge nanoclusters at the edges of Si(1Â 1Â 1) steps with the front in the ãâ1Â â1Â 2ã direction
Keywords: A1 فرایندهای سطح; A1. Diffusion; A1. Nanostructures; A1. Nucleation; A1. Surface processes; B2. Semiconducting germanium; B2. Semiconducting silicon;
Vapor phase surface preparation (etching) of 4H-SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy
Keywords: A1 فرایندهای سطح; A1. Etching; A1. Surface processes; A3. Chemical vapor deposition processes; B2. Semiconducting materials;
Anglesite (PbSO4) epitactic overgrowths and substrate-induced twinning on anhydrite (CaSO4) cleavage surfaces
Keywords: A1 فرایندهای سطح; A1. Crystal morphology; A1. Surface processes; A1. Twinning; A2. Growth from solutions; A3. Epitactic growth; B1. Mineral;
Effects of different substrate surface modifications on the epitaxial ZnO/Si
Keywords: A1 فرایندهای سطح; A1. Surface processes; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting II-VI materials;
The effects of surface treatments of the substrates on high-quality GaN crystal growth
Keywords: A1 فرایندهای سطح; A1. Defects; A1. Substrates; A1. Surface processes; A2. Growth from solution; A3. Liquid phase epitaxy; B1. Nitrides;
Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals
Keywords: A1 فرایندهای سطح; A1. Burton Cabrera and Frank model; A1. Spiral growth; A1. Surface processes; A2. Growth from vapor; A2. Single crystal growth; B1. Silicon carbide
Change in the branch period of the step pattern formed by a moving linear source-initial coarsening and effect of an abrupt change in the velocity
Keywords: A1 فرایندهای سطح; A1. Computer simulation; A1. Morphological instability; A1. Surface processes; A3. Physical vapor deposition processes; B2. Semiconducting silicon;
Deposition of nanometric double layers Ru/Au, Ru/Pd, and Pd/Au onto CdZnTe by the electroless method
Keywords: A1 فرایندهای سطح; A1. Characterisation; A1. Nanostructures; A1. Interfaces; A1. Surface processes; B2. Semiconducting II–VI materials
The characteristics of heterogeneous nucleation on concave surfaces and implications for directed nucleation or surface activity by surface nanopatterning
Keywords: A1 فرایندهای سطح; A1. Nucleation; A1. Surfaces; A1. Surface structure; A1. Surface processes; A1. Roughening
Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2
Keywords: A1 فرایندهای سطح; A1. Surface processes; A3. Chemical vapor deposition processes; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds;
Emergence of regular meandered step structure in simulated growth of GaN(0001) surface
Keywords: A1 فرایندهای سطح; A1. Computer simulation; A1. Surface processes; A1. Surface structure; A2. Growth from vapor
Rim formation on crystal faces growing in confinement
Keywords: A1 فرایندهای سطح; A1. Crystal morphology; A1. Stresses; A1. Surface processes; A1. Surface structure; A1. Supersaturated solutions
Hydrogen etching on the surface of GaN for producing patterned structures
Keywords: A1 فرایندهای سطح; A1. Hydrogen etching; A1. Surface processes; A1. Surface structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials