Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2 (0Â 0Â 0Â 1)
Keywords: A1 فرایندهای سطح; 68.55.âa; 68.55.âAc; A1. Polymorphism; A1. Surface processes; A3. Molecular beam epitaxy; B1. Zincblende; B2. GaN;