کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829546 | 1524494 | 2005 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dislocation-free large area InP ELO layers by liquid phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dislocation-free large area InP ELO layers by liquid phase epitaxy Dislocation-free large area InP ELO layers by liquid phase epitaxy](/preview/png/9829546.png)
چکیده انگلیسی
Epitaxial lateral overgrowth (ELO) was performed on {0 0 1}-oriented InP substrates by liquid phase epitaxy at constant growth temperature (450-650 °C). In this work, 'line and space' (L&S) and L-shaped patterns were formed on the substrates before epitaxy, and then the as-grown and etched surfaces were observed by Nomarski interference optical microscopy. Defect etching revealed dislocation etch pits on both the open seed areas and the coalescence regions of the ELO layer formed on the L&S patterns. However, when using the L-shaped pattern, etch pits were only observed on the open seed regions of the ELO layer. We show that the ELO layers that spread laterally inside the L-shaped pattern are dislocation-free. In addition, large area ELO layers were obtained when the L-shaped pattern was modified by rotating the direction in which it was facing. In the case of the L-shaped pattern, the optical properties of the ELO layer were improved compared with those on the open seed area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 263-274
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 263-274
نویسندگان
Toshio Kochiya, Yutaka Oyama, Toshihiro Kimura, Ken Suto, Jun-ichi Nishizawa,