Keywords: B1 فسفید ها; A2. Selective epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting III-V materials; B3. Avalanche photodiodes;
مقالات ISI B1 فسفید ها (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Orientation of Zn3P2 films via phosphidation of Zn precursors
Keywords: B1 فسفید ها; A3. Polycrystalline deposition; B1. Phosphides; B2. Semiconducting materials; B3. Solar cells;
A yield-optimized access to double-helical SnIP via a Sn/SnI2 approach
Keywords: B1 فسفید ها; A1. Growth models; A2. Growth from vapor; B1. Phosphides; B1. Halides; B1. Tin compounds; B2. Semiconducting ternary compound;
Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy
Keywords: B1 فسفید ها; A1. Growth models; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting III-V materials;
MBE growth and doping of AlGaP
Keywords: B1 فسفید ها; A1. Doping; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting III-V materials;
Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate
Keywords: B1 فسفید ها; A1. Characterization; A3. Metalorganic molecular beam epitaxy; B1. Phosphides; B2. Semiconducting III–V materials
Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells
Keywords: B1 فسفید ها; A1. Defects; A1. Impurities; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting III-V materials;
InGaP/GaAs/InGaAsP triple junction solar cells grown using solid-source molecular beam epitaxy
Keywords: B1 فسفید ها; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting quarternary alloys; B3. Solar cells;
Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers
Keywords: B1 فسفید ها; A3. Metalorganic vapor phase epitaxy; B1. Phosphides; B3. Laser diodes
Effects of growth temperature on surface morphology of InP grown on patterned Si(0Â 0Â 1) substrates
Keywords: B1 فسفید ها; A1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B1. Phosphides; B2. Semiconducting III-V materials;
Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes
Keywords: B1 فسفید ها; A1. Diffusion; A3. Metalorganic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting III-V materials;
Growth of metamorphic InGaP layers on GaAs substrates
Keywords: B1 فسفید ها; A1. Stresses; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting III–V materials
AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 μm grown by MOVPE on InP substrate
Keywords: B1 فسفید ها; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Phosphides; B2. Semiconducting III–V materials; B3. Laser diodes
GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3 μm light emission grown on InP substrate
Keywords: B1 فسفید ها; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Phosphides; B2. Semiconducting III–V materials; B3. Light emitting diodes
InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions
Keywords: B1 فسفید ها; A3. Metalorganic vapor phase epitaxy; B1. Arsenates; B1. Phosphides; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices;
Pseudomorphic growth and strain relaxation of α-Zn3P2 on GaAs(001) by molecular beam epitaxy
Keywords: B1 فسفید ها; A1. Pseudomorphic growth; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Phosphides; B3. Solar cells
Progress in large area organometallic vapor phase epitaxy for III–V multijunction photovoltaics
Keywords: B1 فسفید ها; A3. Metalorganic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium; B2. Semiconducting indium gallium phosphide; B3. Solar cells
Growth of high quality InP layers in STI trenches on miscut Si (0 0 1) substrates
Keywords: B1 فسفید ها; A3. Metalorganic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting III–V materials
Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates
Keywords: B1 فسفید ها; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Arsenides; B1. Phosphides; B1. Indium compounds; B3. Infrared devices
Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)
Keywords: B1 فسفید ها; A1. Reflectance anisotropy spectroscopy; A1. Growth monitoring; A2. Metalorganic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting germanium
Growth and defect structure of ZnGeP2 crystals
Keywords: B1 فسفید ها; A1. Defects; A1. Crystal structure; A2. Growth from melt; B1. Phosphides; B2. Nonlinear optical materials; B2. Semiconducting ternary compounds
InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers
Keywords: B1 فسفید ها; A3. Organometallic vapor phase epitaxy; A3. Quantum wells; B1. Antimonides; B1. Phosphides; B3. Laser diodes
Solution-phase synthesis of nickel phosphide single-crystalline nanowires
Keywords: B1 فسفید ها; 61.46.Km; 81.07.Bc; 81.10.DnA1. Characterization; A1. Nanostructures; B1. Nanomaterials; B1. Phosphides
Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates
Keywords: B1 فسفید ها; 68.37.Lp; 81.07.−b; 81.15.GhA1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. Phosphides; B2. Semiconducting III–V materials
MBE growth and characterization of TlInGaAsN double quantum well structures
Keywords: B1 فسفید ها; 78.66.Fd; 78.60.Fi; 61.72.Vv; A3. Molecular beam epitaxy; B1. Arsenides; B1. Nitrides; B1. Phosphides; B2. Semiconducting III-V materials;
Influence of cooling rate on the liquid-phase epitaxial growth of Zn3P2
Keywords: B1 فسفید ها; 81.05.Hd; 81.15.Lm; 61.05.Cp; 68.37.Hk; 73.61.LeA1. High-resolution X-ray diffraction; A1. X-ray diffraction; A3. Liquid-phase epitaxy; B1. Phosphides; B2. Semiconducting materials
Selective growth of InP/InGaAs 〈0 1 0〉 ridges: Physical and optical characterization
Keywords: B1 فسفید ها; 81.05.Ea; 81.15.HiA3. Chemical beam epitaxy; A3. Selective epitaxy; B1. Phosphides; B3. Semiconducting III–V materials
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods
Keywords: B1 فسفید ها; 61.72.Mn; 61.71.uj; 81.05.Ea; 81.10.−h; 81.10.FqA1. Defects; A1. Twin formation; A2. Czochralski method; A2. Facets; A2. Growth from melt; A2. Growth rate; A2. LEC; A2. Single crystal growth; B1. Phosphides; B2. Semiconducting III–V materials; B2. Semicon
MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength
Keywords: B1 فسفید ها; 78.66.Fd; 78.60.Fi; 61.72.Vv; A3. Molecular beam epitaxy; B1. Arsenides; B1. Phosphides; B2. Semiconducting III-V materials;
Modelling and simulation of MOVPE of GaAs-based compound semiconductors in production scale Planetary Reactors
Keywords: B1 فسفید ها; 81.05.Ea; 81.10.Bk; 81.15.Gh; 81.15.Kk; 82.20.Wt; 82.33.YaA1. Computer simulation; A3. Metal organic vapour phase epitaxy; A3. Planetary reactor; B1. Gallium arsenide; B1. Phosphides
Key issues associated with low threshold current density for InP-based quantum cascade lasers
Keywords: B1 فسفید ها; 85.60.Bt; 85.30.De; 78.30.Fs; A3. Molecular beam epitaxy; B1. Phosphides; B3. Infrared devices; B3. QC laser;
Fabrication of novel copper phosphide (Cu3P) hollow spheres by a simple solvothermal method
Keywords: B1 فسفید ها; A1. Crystallites; A1. Crystal morphology; A1. Nanostructures; B1. Phosphides
Controlled synthesis and characterization of nickel phosphide nanocrystal
Keywords: B1 فسفید ها; A1. Characterization; A1. Crystal morphology; A1. Solvent; A1. X-ray diffraction; B1. Nanomaterials; B1. Phosphides
Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics
Keywords: B1 فسفید ها; 78.66.Fd; 78.60.Fi; 61.72.Vv; A3. Molecular beam epitaxy; B1. Arsenides; B1. Nitrides; B1. Phosphides; B2. Semiconducting III-V materials;
Thin films of würtzite materials-AlN vs. AlP
Keywords: B1 فسفید ها; 68.35.Bs; 73.20.At; 81.10.Aj; 81.15.Aa; A1. Computer simulation; A1. Crystal morphology; A1. Nanostructures; B1. Nanomaterials; B1. Nitrides; B1. Phosphides;
RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(0Â 0Â 1) substrate using Ge-buffer layer
Keywords: B1 فسفید ها; 75.50.Pp; 81.15.Hi; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Phosphides; B2. Magnetic materials;
Angular dependence of lateral growth rate and kink-step structure on InP surface during liquid phase epitaxial condition
Keywords: B1 فسفید ها; 81.15.Lm; A1. Crystal morphologies; A1. Growth models; A1. Surface structure; A3. Liquid-phase epitaxy; B1. Phosphides; B2. Semiconducting III-V materials;
Room-temperature yellow-amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(1Â 0Â 0) substrates
Keywords: B1 فسفید ها; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting indium gallium phosphide;
SiC epitaxial growth on Si(0Â 0Â 1) substrates using a BP buffer layer
Keywords: B1 فسفید ها; 81.15.âz; A1. Defect; A1. Growth mechanism; A3. Chemical vapor deposition processes; B1. 3C-SiC; B1. Phosphides;
Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy
Keywords: B1 فسفید ها; 68.55.Jk; 81.05.Ea; 81.15.Gh; A1. Crystal morphology; A1. Growth models; A3. Organometallic vapor phase epitaxy; A3. Selective epitaxy; A3. Bridged mask growth; B1. Phosphides;
Dislocation-free large area InP ELO layers by liquid phase epitaxy
Keywords: B1 فسفید ها; 81.15.Lm; A1. Crystal morphology; A1. Morphological stability; A1. Surface processes; A3. Liquid phase epitaxy; B1. Phosphides; B2. Semiconducting indium compounds;