Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy

We propose a novel epitaxial growth method, named as bridged mask growth (BMG), where the epitaxial growth characteristics under the bridged mask is different from that outside the BMG area. The growth rate under the bridged mask can be controlled by changing the bridge width, the opening gap width between neighboring bridges, and the thickness of spacer layer. The transition of growth characteristics between the BMG area and its outside region is confined in a very short distance. We find the relation of bridge pattern dimensions with spacer thickness for good surface morphology.