Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Adsorption; A2. Surface processes; A3. Chemical vapor deposition processes; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; B1. Nitrides;
مقالات ISI A3 اپیتاکسی فاز بخار آلومینیوم (ترجمه نشده)
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Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. High resolution X-ray diffraction; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Semiconducting ternary compounds; B3. Solar cells;
Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A3. Metalorganic vapor phase epitaxy; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; A1. Heat transfer; B1. Nitrides;
Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100)
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Nucleation; A1. Surface structure; A3. Organometallic vapor phase epitaxy; B2. Semiconducting silicon; B2. Semiconducting III-V materials; B3. Solar cells;
Experimental study of the orientation dependence of indium incorporation in GaInN
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A3. Metal organic chemical vapor deposition; A3. Metal organic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Diffusion; A3. Metalorganic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting III-V materials;
Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices; B3. Laser diodes;
In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. X-ray diffraction; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B3. Heterojunction semiconductor devices;
Growth of AlN by pulsed and conventional MOVPE
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. High resolution X-ray diffraction; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting III-V materials;
Effect of surfactant Sb on In incorporation and thin film morphology of InGaN layers grown by organometallic vapor phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A3. Organometallic vapor phase epitaxy; A3. Surfactant-mediated epitaxial growth; B1. Nitrides; B2. Semiconducting III–V materials
Compositionally undulating step-graded InAsyP1−y buffer layer growth by metal-organic chemical vapor deposition
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A3. Organometallic vapor phase epitaxy; B1. Gallium compounds; B2. Semiconducting gallium compounds; B2. Semiconducting indium compounds; B3. Solar cells
MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; B1. Nanomaterials; B1. Antimonides; B3. Heterojunction semiconductor devices
Multiwafer zinc diffusion in an OMVPE reactor
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Diffusion; A3. Metalorganic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B2. Semiconducting indium phosphide
A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Crystal morphology; A3. Organometallic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; B2. Semiconducting indium compounds;
Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≤x≤1) deposition by LP OMVPE
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A3. Low-pressure metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; B2. Semiconducting ternary compounds
InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A3. Organometallic vapor phase epitaxy; A3. Quantum wells; B1. Antimonides; B1. Phosphides; B3. Laser diodes
Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N2
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Spontaneous atomic ordering; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III-V materials
Enhanced cation-substituted p-type doping in GaP from dual surfactant effects
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Doping; A1. Surface; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III–V materials68.35.−p; 68.43.Bc; 81.05.Ea; 68.55.Ln
Microstructures produced during the epitaxial growth of InGaN alloys
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Low dimensional structures; A1. Nanostructures; A1. Phase equilibria; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B3. Light-emitting diodes;
Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. High resolution X-ray diffraction; A1. Interfaces; A3. Organometallic vapor phase epitaxy; A3. Quantum wells; A3. Superlattices; B1. Antimonides68.37.LP
Atomic ordering in GaAsSb (0Â 0Â 1) grown by metalorganic vapor phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. High resolution X-ray diffraction; A3. Organometallic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; 68.37.LP;
MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. X-ray diffraction; A1. ZnO substrate; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting materials;
Simple technique for measuring the filled volume of liquid or solid CVD precursor chemicals in bubblers
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 81.15.−z; 85.40.Sz; 81.15.GhA2. Growth from vapor; A3. Metalorganic chemical vapor deposition; A3. Chemical vapor deposition processes; A3. Organometallic vapor phase epitaxy; A3. Vapor phase epitaxy
Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 7.20.Ka; 81.15.Gh; 68.47.FgA2. Metalorganic chemical vapor deposition; A2. Metalorganic vapor phase epitaxy; A3. Pyrometry; A3. Organometallic vapor phase epitaxy; B1. Indium gallium nitride; B1. Gallium nitride; B1. Indium nitride
Kinetics of dopant incorporation in GaAs grown by organometallic vapor-phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 61.72.Vv; 68.55.Ln; 71.55.EqA1. Diffusion; A1. Doping; A1. Growth models; A3. Organometallic vapor phase epitaxy; B2. Semiconducting gallium arsenide
Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A1. Photoluminescence; A3. Organometallic vapor phase epitaxy; A3. Quantum well; B1. InGaAsN; B2. Semiconducting III-V materials;
MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrate
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A3. Organometallic vapor phase epitaxy; B1. Dilute nitrides; B2. Semiconducting III-V materials; B3. Laser diodes;
Process conditions optimization for the maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 81.15.Gh; 82.20.Wt; 81.05.EaA1. Computer simulation; A1. Fluid flows; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III–V materials
Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSb
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 71.20.Nr; 78.55.A; 83.70; 61.16.B; A1. Surface structure; A3. Organometallic vapor phase epitaxy;
Emissivity-correcting near-UV pyrometry for group-III nitride OMVPE
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 7.20.KaA3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Aluminum nitride; B1. Gallium nitride
Zn enhancement during surfactant-mediated growth of GaInP and GaP
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 68.55.Ln; 81.05.Ea; 81.15.Gh; 81.15.KkA1. Doping; A1. Surfactants; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III–V materials
Growth and characterization of defect free GaAs nanowires
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 61.50.A; 61.72; 81.05.E; 81.07A1. Defects; A1. Interfaces; A1. Nanostructures; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III–V materials
Modeling the parasitic chemical reactions of AlGaN organometallic vapor-phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Aluminum nitride; B1. Gallium nitride
Pattern size effect on source supply process for sub-micrometer scale selective area growth by organometallic vapor phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 81.05.Ea; 81.10.Aj; 81.10.Bk; 81.15.GhA1. Crystal morphology; A1. Growth models; A3. Organometallic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III–V materials
Numerical optimization of an optical showerhead reactor design for organometallic vapor phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 81.10.−h; 81.15.GhA1. Computer simulation; A1. Fluid flows; A1. Growth models; A1. X-ray diffraction; A3. Organometallic vapor phase epitaxy
On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 81.15.Gh; 82.20.Wt; 81.05.Ea; 47.20.BpA1. Computer simulation; A1. Convection; A1. Fluid flows; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III–V materials
Surface modifications induced by bismuth on (0Â 0Â 1) GaAs surfaces
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 81.15.Gh; 78.47.+p; 78.40.-q; 68.65.+g; A1. Desorption; A1. Optical spectroscopy; A1. Surface structure; A3. Organometallic vapor phase epitaxy;
Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 78.66.Fd; 78.60.Hk; 71.35.Cc; A1. Characterization; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminium compounds;
Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy
Keywords: A3 اپیتاکسی فاز بخار آلومینیوم; 68.55.Jk; 81.05.Ea; 81.15.Gh; A1. Crystal morphology; A1. Growth models; A3. Organometallic vapor phase epitaxy; A3. Selective epitaxy; A3. Bridged mask growth; B1. Phosphides;