کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707653 | 1023760 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film](/preview/png/10707653.png)
چکیده انگلیسی
In the present work we will report on the optical properties of an AlN film homoepitaxially grown on a high-quality large bulk AlN single crystal. The latter was grown by a sublimation-recondensation technique, while the film was grown by organometallic vapor-phase epitaxy. Cathodoluminescence measurements were performed using electron beam energies between 2 and 10Â keV in order to excite the sample and so to probe different sample depths, making it possible to differentiate between different features which originate in the AlN homoepitaxial film. The penetration depth has been determined through the calculation of the Bohr-Bethe maximum range of excitation using the approximation to the Everhart-Hoff expression for the energy loss within a solid.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 188-193
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 188-193
نویسندگان
E. Silveira, J.A. Freitas, G.A. Slack, L.J. Schowalter, M. Kneissl, D.W. Treat, N.M. Johnson,