Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Impurities; A1. Directional solidification; A1. Semiconducting silicon; B3. Solar cells;
مقالات ISI A1 تعیین مشخصات (ترجمه نشده)
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Keywords: A1 تعیین مشخصات; A1. Low dimensional structures; A1. Characterization; A1. Crystal structure; A3.Chemical vapor deposition processes; B1. Nitrides; B2. Dielectric materials;
Keywords: A1 تعیین مشخصات; A1. Doping; A1. Characterization; A3. Optical vapor supersaturated precipitation; A3. Solid state method; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Phase equilibria; A2. Growth from solution; A2. Seed crystals; B1 Organic compound;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Interfaces; A1. Heat transfer; A1. Radiation; A2. Laser heated pedestal growth; B1. Sapphire;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Defects; A1.Growth models; A1. Nanostructures;
Keywords: A1 تعیین مشخصات; A1. Characterization; A3. Quantum wells; B1. Nanomaterials; B2. Semiconducting III-V materials; B3. Solar cells;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Crystallites; B1. Inorganic compounds; B2. Magnetic materials; B1. Nanomaterials;
Keywords: A1 تعیین مشخصات; A1. Biocrystallization; A2. Growth from solutions; A1. adsorption; A1. Characterization; B1. Inorganic compounds; B1. Phosphates;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Directional solidification; A1. Line defects; A2. Growth from melt; B1. Elemental solids;
Keywords: A1 تعیین مشخصات; A2. Single crystal growth; A1. X-ray diffraction; A1. Characterization; B1. Cobalt adipate tetrahydrate;
Keywords: A1 تعیین مشخصات; A1. Characterization; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; B1. Gallium compounds; B1. Oxides;
Keywords: A1 تعیین مشخصات; A1. Biomaterials; A1. Characterization; A2. Growth from solutions; B1. Calcium orthophosphates; B1. Biological macromolecules;
Keywords: A1 تعیین مشخصات; A1. Aggregation; A1. Characterization; A1. Microcomputed tomography; A1. Crystal morphology; B1. Salts;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Crystal morphology; A1. Crystal structure; A1. X-ray diffraction; A3. Chemical vapor deposition; B2. Semiconducting silicon compounds
Keywords: A1 تعیین مشخصات; A1. Solvents; A1. Solubility; A1. Crystal structure; A2. Single crystal growth; A1. Characterization; A2. X-ray diffraction;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. X-ray microdiffraction; A3. Metalorganic chemical vapor deposition; B1. Nitride; B2. Semiconductor III-V materials; B2. Piezoelectric materials;
Keywords: A1 تعیین مشخصات; A1. Solvent screening; A1. Solubility; A1. Nucleation; A1. Crystal habit; A1. Characterization; B1. Metformin hydrochloride
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Crystal morphology; A1. Crystal structure; A1. X-ray diffraction; A2. Hydrothermal crystal growth; B1. Nanomaterials;
Keywords: A1 تعیین مشخصات; A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting aluminum compounds
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Defects; A3. Microwave plasma assisted chemical vapor deposition process; B1. Diamond
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Low dimensional structures; B1. Nitrides; B1. Graphene; B1. Bismuth compounds;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Solidification; A2. Bridgman technique; B1. Lithium compounds; B2. Semiconducting ternary compounds
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Defects; A1. Solidification; A2. Bridgman technique; B1. Lithium compounds; B2. Semiconducting ternary compounds;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; A3. Multilayers; B1. Suboxides; B2. Semiconducting silicon compounds
Keywords: A1 تعیین مشخصات; A1. Characterization; A2. Single crystal growth; B1. Rare earth compounds; B2. Phosphors;
Keywords: A1 تعیین مشخصات; A1. Crystal growth; A1. Characterization; A1. X-ray diffraction; A1. Single crystal growth; Dielectric characterization;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Stresses; B1. Germanium silicon alloys
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Crystal structure; A1. Impurities; A2. Seed crystals; B1. Phosphates;
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Crystal morphology; A1. Powder X-ray diffraction; A2. Single crystal growth
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Nanostructures; A1. X-ray diffraction; B1. Inorganic compounds; B1. Semiconducting materials;
Keywords: A1 تعیین مشخصات; A1. Characterization; A3. Microwave plasma assisted chemical vapour deposition process; B1. Diamond; B1. Nanomaterials
Keywords: A1 تعیین مشخصات; A1. Crystal structure; A1. Characterization; A1. Crystal morphology; A1. X-ray diffraction; A2. Growth from solutions; B1. Organic compounds
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Recrystallization; A2. Growth from solution;
Keywords: A1 تعیین مشخصات; A1. Crystal structure; A1. X-ray diffraction; A1. Characterization; A1. Single crystal growth; A2. Growth from solutions; B1. Organic compounds;
Keywords: A1 تعیین مشخصات; A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon compounds;
Estimation of γ/γⲠinterfacial energy in Ni-Co base superalloy TMW-4M3
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Diffusion; A2. Growth from high temperature solutions; B1. Alloys;
Optical study of Tm-doped solid solution (Sc0.5Y0.5)2SiO5 crystal
Keywords: A1 تعیین مشخصات; A1. Characterization; A2. Czochralski method; A2. Single crystal growth; B1. Rare earth compounds; B3. Solid state lasers;
Investigation of Cd1âxMgxTe as possible materials for X and gamma ray detectors
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Alloys; B2. Semiconducting II-VI materials;
Crystal growth and scintillation performance of Cs2HfCl6 and Cs2HfCl4Br2
Keywords: A1 تعیین مشخصات; A1. Characterization; A2. Bridgman technique; A2. Single crystal growth; B1. Halides; B2. Scintillator materials;
Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition
Keywords: A1 تعیین مشخصات; A1. Characterization; A3. Laser epitaxy; A3. Quantum wells; B1. Alloys; B1. Oxides; B2. Semiconducting ternary compounds;
Growth and characterization of pure and Ca2+ doped MnHg(SCN)4 single crystals
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Doping; A2. Growth from solution; A2. Single crystal growth; B2. Dielectric materials;
Characterization of CuCl quantum dots grown in NaCl single crystals via optical measurements, X-ray diffraction, and transmission electron microscopy
Keywords: A1 تعیین مشخصات; B1. Cuprous chloride; A1. Nanostructures; A1. Characterization; A1. X-ray diffraction; A1. Transmission electron microscopy; B1. Sodium chloride;
Synthesis and characterization of purple NaAlSi2O6 jadeite under high pressure and high temperature
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Doping; A1. X-ray diffraction; A2. Growth from melt; B1. Minerals;
Semiconductor crystals based on CdTe with Se - Some structural and optical properties
Keywords: A1 تعیین مشخصات; A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Alloys; B2. Semiconducting II-VI materials;
Optimization of single crystal growth of candidate quantum spin-ice Pr2Hf2O7 by optical floating-zone method
Keywords: A1 تعیین مشخصات; B1. Pyrochlore; B.2 Quantum spin-ice; A1. Characterization; A1. High resolution X-ray diffraction; A2. Floating zone technique;
Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy
Keywords: A1 تعیین مشخصات; A3. Molecular beam epitaxy; B1. Nitrides; A1. Segregation; B2. Semiconducting III-V materials; A1. Characterization;
Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy
Keywords: A1 تعیین مشخصات; B2. Dilute nitrides; A3. Liquid phase epitaxy; B2. InGaAsSbN; A1. Characterization; A1. Computer simulation; B2. Semiconducting pentanary alloys;
Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors
Keywords: A1 تعیین مشخصات; A1. Characterization; A2. Bridgman technique; B1. Cadmium compounds; B2 Semiconducting II-VI materials;
Investigating new activators for small-bandgap LaX3 (Xâ¯=â¯Br, I) scintillators
Keywords: A1 تعیین مشخصات; A1. Characterization; A2. Bridgman technique; A2. Growth from melt; B1. Halides; B1. Rare earth compounds; B3. Scintillators;