Keywords: B1 نیتریت ها; A1. Adsorption; A2. Surface processes; A3. Chemical vapor deposition processes; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; B1. Nitrides;
مقالات ISI B1 نیتریت ها (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: B1 نیتریت ها; A1. Low dimensional structures; A1. Characterization; A1. Crystal structure; A3.Chemical vapor deposition processes; B1. Nitrides; B2. Dielectric materials;
Keywords: B1 نیتریت ها; A1. Crystal morphology; A1. Recrystallization; A3. Physical vapor deposition processes; A3. Solid phase epitaxy; B1. Nitrides;
Keywords: B1 نیتریت ها; Cubic aluminium nitride; Properties; Synthesis; Metastable modifications; Thermal conductivity; A1. Nucleation; A1. Surface structure; B1. Nitrides; A3. Chemical vapour deposition processes;
Keywords: B1 نیتریت ها; B1. Nitrides; B2. Semiconductor aluminum gallium nitride compounds; A3. Molecular beam epitaxy; A1. Buffer layer;
Keywords: B1 نیتریت ها; A2. Ammonothermal; B1. Bulk GaN; B1. Nitrides; A1. Kinetics; A1. Crystal growth;
Keywords: B1 نیتریت ها; A1. Atomic force microscopy; A1. Computer simulation; A1. Diffusion; A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides;
Keywords: B1 نیتریت ها; A1. Substrate; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B3. Light emitting diodes;
Keywords: B1 نیتریت ها; A1. Solubility; A1. Mineralizers; A2. Ammonothermal; B1. Nitrides; B1. Supercritical ammonia solutions;
Keywords: B1 نیتریت ها; A1. Solubility; A1. Solvents; A1. X-ray diffraction; A2. Ammonothermal crystal growth; B1. Inorganic compounds; B1. Nitrides;
Keywords: B1 نیتریت ها; B1. Nitrides; A2. Ammonothermal; B1. Molybdenum alloys; B1. GaN; A1. Corrosion; B1. Supercritical ammonia;
Keywords: B1 نیتریت ها; A1. Crystal morphology; A1. Recrystallization; A3. Physical vapor deposition processes; A3. Solid phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
Keywords: B1 نیتریت ها; A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting aluminum compounds
Keywords: B1 نیتریت ها; A1. Crystal structure; A1. Phase diagram; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic materials;
Keywords: B1 نیتریت ها; A1. Interfaces; A1. X-ray diffraction; A3. Liquid phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Keywords: B1 نیتریت ها; A1. Characterization; A1. Low dimensional structures; B1. Nitrides; B1. Graphene; B1. Bismuth compounds;
Keywords: B1 نیتریت ها; A1. Adsorption; A1. Crystal structure; B1. Nitrides; B2. Semiconducting materials
Keywords: B1 نیتریت ها; A1. Solvents; B1. Nitrides; Ammonothermal crystal growth; Solubility;
Keywords: B1 نیتریت ها; A1. Crystal structure; A1. Crystallites; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Keywords: B1 نیتریت ها; A1. 3D CFD; A2. Ammonothermal; B1. Nitrides;
Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy
Keywords: B1 نیتریت ها; A1. Reflection high energy electron diffraction; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Plasma-assisted molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition
Keywords: B1 نیتریت ها; A1. Crystal morphology; A1. Desorption; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
Keywords: B1 نیتریت ها; B1. Nitrides; B2. Semiconducting ternary compounds; B2. Semiconducting III-V materials; A1. Crystal morphology; A3. Metalorganic vapor phase epitaxy;
Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy
Keywords: B1 نیتریت ها; A3. Chemical beam epitaxy; B1. Nitrides; A1. Atomic force microscopy; A1. X-ray diffraction; A1. Photoluminescence;
Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor
Keywords: B1 نیتریت ها; A1. Impurities; A1. Desorption; A3. Metal organic chemical vapor deposition; B1. Nitrides;
MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
Keywords: B1 نیتریت ها; A1. Polarity; A1. X-ray diffraction; A3. Metal-organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
MOVPE growth and high-temperature annealing of (101¯0) AlN layers on (101¯0) sapphire
Keywords: B1 نیتریت ها; A1. Crystal morphology; A1. Recrystallization; A3. Physical vapour deposition processes; A3. Solid phase epitaxy; B1. Nitrides; B2. Semiconducting aluminium compounds;
Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
Keywords: B1 نیتریت ها; A1. Doping; A3. Molecular beam epitaxy; B1. Nitrides; B1. Gallium nitride;
Orientation relationship between β-Si3N4 and Si in multicrystalline silicon ingots for PV applications
Keywords: B1 نیتریت ها; A1. Nucleation; B2. Semiconducting Silicon; A1. Crystal structure; B1. Nitrides; A1. Transmission electron microscopy;
Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy
Keywords: B1 نیتریت ها; A3. Molecular beam epitaxy; B1. Nitrides; A1. Segregation; B2. Semiconducting III-V materials; A1. Characterization;
Influence of surface step width of 4H-SiC substrates on the GaN crystal quality
Keywords: B1 نیتریت ها; A1. Atomic force microscopy; A1. Nucleation; A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Growth of N-polar GaN by ammonia molecular beam epitaxy
Keywords: B1 نیتریت ها; A1. Atomic force microscopy; A1. Morphological stability; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0â¯0â¯1) substrate through controlled nanowire coalescence
Keywords: B1 نیتریت ها; A1. Nanostructures; A1. Doping; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B3. Light emitting diodes;
Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si
Keywords: B1 نیتریت ها; A3. Metalorganic vapour phase epitaxy; B1. Nitrides; B2. GaN; B2. Semiconducting aluminium compounds;
Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy
Keywords: B1 نیتریت ها; A1. Growth models; A1. Surface structure; A1. Mass transfer; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Keywords: B1 نیتریت ها; A1. Polarity; A1. X-ray diffraction; A3. Metal-organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
High-temperature thermal annealing of nonpolar (1 0 1¯ 0) AlN layers sputtered on (1 0 1¯ 0) sapphire
Keywords: B1 نیتریت ها; A1. Crystal morphology; A1. Recrystallization; A3. Physical vapour deposition processes; A3. Solid phase epitaxy; B1. Nitrides; B2. Semiconducting aluminium compounds;
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
Keywords: B1 نیتریت ها; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; A1. Pulsed mode; B2. Semiconducting III-V materials;
In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
Keywords: B1 نیتریت ها; A1. Interfaces; Crystal morphology; Line defects; A2. Growth from vapor; B1. Nitrides;
Empirical interatomic potential approach to the stability of graphitic structure in BAlN and BGaN alloys
Keywords: B1 نیتریت ها; A1. Computer simulation; A1. Crystal structure; B1. Nitrides; B1. Alloys;
An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures
Keywords: B1 نیتریت ها; B1. Nitrides; A2. Ammonothermal; A2. Single crystal growth; B1. Molybdenum Alloys; B1. GaN; B1. Supercritical ammonia;
Physical vapor transport growth of bulk Al1âxScxN single crystals
Keywords: B1 نیتریت ها; A2. Growth from vapor; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting aluminum compounds; Scandium aluminum nitride; Physical vapor transport; Sublimation; Substrate;
Mesa orientation dependence of lateral growth of GaN microchannel epitaxy by electric liquid-phase epitaxy using a mesa-shaped substrate
Keywords: B1 نیتریت ها; A3. Liquid phase epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; A1. Crystal morphology;
X-ray characterization technique for the assessment of surface damage in GaN wafers
Keywords: B1 نیتریت ها; A1. Surface processes; A1. X-ray diffraction; A2. Growth from solutions; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting gallium compounds;
Growth of III-N/graphene heterostructures in single vapor phase epitaxial process
Keywords: B1 نیتریت ها; A3. Metalorganic vapor phase epitaxy; B1. Nanomaterials; B1. Nitrides; B2. Semiconducting gallium compounds;
Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage
Keywords: B1 نیتریت ها; A1. Nucleation; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
Keywords: B1 نیتریت ها; B2. Semiconducting III-V materials; A3. Metalorganic vapor phase epitaxy; A1. Characterization; A1. Substrates; B1. Nitrides;
Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family
Keywords: B1 نیتریت ها; A1. Hardness; A1. Elastic moduli; A1. Indentation; B1. Nitrides; B1. Nitride alloys;
Efficient iron doping of HVPE GaN
Keywords: B1 نیتریت ها; A1. Characterization; A1. Impurities; A1. X-ray diffraction; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting materials;
Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates
Keywords: B1 نیتریت ها; A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides;