کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148372 | 1524332 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0â¯0â¯1) substrate through controlled nanowire coalescence
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on a detailed investigation of molecular beam epitaxy and characterization of GaN epilayers on Si (0â¯0â¯1) substrate through controlled nanowire coalescence. By varying the substrate temperature, the axial/lateral growth ratio of GaN nanowires on Si (0â¯0â¯1) can be modulated by nearly two orders of magnitude. As such, the transition from GaN nanowire arrays to coalesced GaN epilayers can be obtained through a relatively thin (â¼150â¯nm) intermediate layer, which leads to the subsequent formation of crack-free GaN epilayers on Si (0â¯0â¯1) substrate. Detailed scanning transmission electron microscopy (STEM) studies suggest that the resulting GaN epilayers are nearly free of dislocations and stacking faults. Controlled p-type conduction is further achieved for Mg-doped GaN epilayers. Hole concentrations â¼5.6â¯Ãâ¯1017â¯cmâ3 were measured at room temperature, with mobility values â¼3â¯cm2/V·s. Moreover, we have demonstrated functional InGaN/GaN LEDs on Si (0â¯0â¯1) substrate, wherein the active region and p-contact layer consist of InGaN/GaN disks-in-nanowires and Mg-doped GaN epilayers, respectively. The devices exhibited a turn on voltage of 2.7â¯V and strong emission at 525â¯nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 109-114
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 109-114
نویسندگان
Yuanpeng Wu, Yongjie Wang, Kai Sun, Anthony Aiello, Pallab Bhattacharya, Zetian Mi,