کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148902 | 1524346 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The unintentional silicon incorporation during the metalorganic vapor phase epitaxy (MOVPE) of nominally undoped Al0.7Ga0.3N in a Planetary Reactor under various growth conditions was investigated. Dependent on growth temperature, pressure and V/III ratio, Si concentrations of below 1â¯Ãâ¯1016 up to 4â¯Ãâ¯1017â¯cmâ3 were measured. Potential Si sources are discussed and, by comparing samples grown in a SiC coated reactor setup and in a TaC coated setup, the SiC coatings in the reactor are identified as the most likely source for the unintentional Si doping at elevated temperatures above 1080â¯Â°C. Under identical growth conditions the background Si concentration can be reduced by up to an order of magnitude when using TaC coatings.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 297-300
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 297-300
نویسندگان
J. Jeschke, A. Knauer, M. Weyers,