Keywords: A1 ناخالصی ها; A1. Characterization; A1. Impurities; A1. Directional solidification; A1. Semiconducting silicon; B3. Solar cells;
مقالات ISI A1 ناخالصی ها (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Free energy barrier; A1. Supersaturated solutions; B1. Amorphous calcium carbonate; B1. Magnesium;
Keywords: A1 ناخالصی ها; A1. Impurities; A2. Growth from melt; B3. Solar cell;
Keywords: A1 ناخالصی ها; A1. Impurities; A1.Crystal morphology; B1. Sulfides; B1. Nanocrystals; A1. Phase Change; A1. Shape control;
Keywords: A1 ناخالصی ها; A1. Dendrites; A1. Convection; A1. Impurities; A1. Solidification; A2. Growth from melts; B1. Metals;
Keywords: A1 ناخالصی ها; 00-01; 99-00; A1. Defects; A1. Impurities; A1.Surface structure; A1. Volume defects; A1. Segregation; B3. Solar Cells;
Keywords: A1 ناخالصی ها; 00-01; 99-00; A1. Defects; A1. Impurities; A1.Surface structure; A1. Planar defects; A1. Segregation; B3. Solar cells;
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Crystallization kinetics; A1. Computer simulation; B1. Zinc lactate; B1. Malic acid;
Keywords: A1 ناخالصی ها; A1. Adsorption; A1. Computer simulation; A1. Impurities; A1. Single crystal growth; B1. Aromatic compounds;
Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A2. Growth from melt; B2. Semiconducting silicon; B3. Solar cells;
Keywords: A1 ناخالصی ها; A1. Crystal morphology; A1. Crystal structure; A1. Growth models; A1. Impurities; A1. Optical microscopy; B1. Organic compounds;
Keywords: A1 ناخالصی ها; A1. Colloidal crystals; A1. Impurities; A1. Growth models; A1. Interfaces; A1. Solidification
Keywords: A1 ناخالصی ها; A1. Grain boundaries; A1. Impurities; A1. Segregation; Multicrystalline silicon; Seeded growth;
Keywords: A1 ناخالصی ها; A1. Etching; A1. Impurities; A1. Defects; B1. Diamond
Keywords: A1 ناخالصی ها; A1. Crystal morphology; A1. Impurities; A2. Growth from solutions; A2. Single crystal growth; B1. Sodium chlorate; B2. Nonlinear optic materials
Keywords: A1 ناخالصی ها; A1. Impurities; A3. Molecular beam epitaxy; B2. Semiconducting silicon; Low-coherence interferometry; Real-time temperature measurements
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Nucleation; A1. Purification; B1. Proteins;
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Nulceation; A2. Growth from solution; B1. Minerals; B1. Potassium compounds;
Keywords: A1 ناخالصی ها; A1. Crystal morphology; A1. Impurities; A2. Single crystal growth; B1. Diamond
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Segregation; A2. Floating zone technique; B2. Semiconducting silicon;
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Phase diagrams; A1. Purification; A2. Czochralski method; B1. Halides; B2. Semiconducting lead compounds;
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Surfactants; A1 Point defects; A1. Diffusion of In, P, and Zn; B2. Semiconducting gallium arsenide;
Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Convection; A1. Heat transfer; A1. Mass transfer; A1. Impurities; A1. Interfaces; A1. Segregation; A2. Bridgman technique; A2. Microgravity conditions
Keywords: A1 ناخالصی ها; A1. Solidification; A1. Impurities; A1. Crystal structure; B1. Silicon;
Keywords: A1 ناخالصی ها; A1. Impurities; A2. Bridgman technique; B1. Aromatic compounds; B2. Nonlinear optic materials; B2. Semiconducting material
Keywords: A1 ناخالصی ها; A1. Computer simulations; A1. Growth models; A1. Impurities; A1. Supersaturated solutions; A2. Crystal growth from solutions;
Keywords: A1 ناخالصی ها; A1. Growth models; A1. Impurities; A1. Interfaces; A1. Segregation; A1. Solidification; B1. Oxides;
Keywords: A1 ناخالصی ها; A1. Characterization; A1. Crystal structure; A1. Impurities; A2. Seed crystals; B1. Phosphates;
Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells;
Keywords: A1 ناخالصی ها; A1. Directional solidification; A1. Impurities; A2. Growth from melt; A2. Czochralski method; B2. Semiconducting silicon;
Effects of Fe-Ni solvent with different Fe contents on the boron concentration in colorless diamonds
Keywords: A1 ناخالصی ها; A1. Crystal morphology; A1. Impurities; A2. Single crystal growth; A2. Growth from high temperature solutions; B1. Diamond; B3. Infrared devices;
Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Desorption; A3. Metal organic chemical vapor deposition; B1. Nitrides;
Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth
Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Effect of Mg2+, Al3+, and Fe3+ ions on crystallization of type α hemi-hydrated calcium sulfate under simulated conditions of hemi-hydrate process of phosphoric acid
Keywords: A1 ناخالصی ها; A1. Crystallization; A1. Induction time; A1. Impurities; B1. Type α hemi-hydrated calcium sulfate;
Structural and electrical properties of Ge-on-Si(0â¯0â¯1) layers with ultra heavy n-type doping grown by MBE
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Doping; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting germanium;
Effects of in-situ UV irradiation on the uniformity and optical properties of GaAsBi epi-layers grown by MBE
Keywords: A1 ناخالصی ها; A3. Molecular beam epitaxy; A1. Impurities; B1. Bismuth compounds; B2. Semiconducting III-V materials;
Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime
Keywords: A1 ناخالصی ها; A3. Epitaxial silicon; A3. Chemical vapor deposition processes; B3. Photovoltaics; A1. Line defects; B2. Semiconducting silicon; A1. Impurities;
Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth
Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Efficient iron doping of HVPE GaN
Keywords: A1 ناخالصی ها; A1. Characterization; A1. Impurities; A1. X-ray diffraction; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting materials;
Homoepitaxial HVPE GaN: A potential substrate for high performance devices
Keywords: A1 ناخالصی ها; A. Characterization; A1. Impurities; A1. X-Ray diffraction; A2. Vapor phase epitaxy; B1. Nitrides;
Antimony segregation and n-type doping in Si/Si(111) films grown by molecular beam epitaxy
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Segregation; A3. Molecular beam epitaxy; B2. Semiconducting silicon;
Properties of heavily impurity-doped PbSnTe liquid-phase epitaxial layers grown by the temperature difference method under controlled Te vapor pressure
Keywords: A1 ناخالصی ها; A1. Doping; A1. Impurities; A3. Liquid phase epitaxy; B2. Semiconducting lead compounds; B3. Infrared devices;
Growth of high purity N-polar (In,Ga)N films
Keywords: A1 ناخالصی ها; A1. Impurities; A1. Polarity; A1. N-polar; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth
Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A2. Czochralski method;
Studies on high temperature vapor phase epitaxy of GaN
Keywords: A1 ناخالصی ها; A1. Impurities; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Growth and luminescent properties of single crystalline films of Ce3+ doped Pr1âxLuxAlO3 and Gd1âxLuxAlO3 perovskites
Keywords: A1 ناخالصی ها; A1. Impurities; A2. Growth from high temperature solutions; A3. Liquid phase epitaxy; B1. Oxides; B2. Scintillator materials;
Quality improvement of CdZnTe single crystal by ultrasound processing
Keywords: A1 ناخالصی ها; B2. Semiconducting II-VI materials; B2. Semiconducting cadmium compounds; A1. Impurities; A1. Defects; A1. Purification;
Optimization of experimental conditions for the monitoring of nucleation and growth of racemic Diprophylline from the supercooled melt
Keywords: A1 ناخالصی ها; A1. Crystal morphology; A1. Impurities; A1. Nucleation; A2. Growth from melt; A1. Optical microscopy; B1. Organic compounds;
Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot
Keywords: A1 ناخالصی ها; A1. Minority carrier lifetime; A1. Doping; A1. Impurities; A2. Directional solidification; B2 Multi-crystalline Si;
Travelling-solvent floating-zone growth of the dilutely Co-doped spin-ladder compound Sr14(Cu, Co)24O41
Keywords: A1 ناخالصی ها; A2. Single crystal growth; A2. Floating zone technique; A2. Travelling solvent zone growth; B1. Low dimensional Cuprates; A1. Impurities; B1. Spin ladder;