دانلود مقالات ISI درباره A1 ناخالصی ها + ترجمه فارسی

Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Directional solidification; A1. Impurities; A2. Growth from melt; B2. Semiconducting silicon; B3. Solar cells

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2012 سفارش ترجمه

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Keywords: A1 ناخالصی ها; A1. Doping; A1. Impurities; A2. Czochralski method; B2. Semiconducting germanium

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2012 سفارش ترجمه

Growth temperature dependence of the background doping in MOVPE-grown InAs

Keywords: A1 ناخالصی ها; A1. Doping; A1. Impurities; A1. Hydrogen; A3. Vapor phase epitaxy; B2. Passivation; B2. Semiconducting indium arsenide

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2012 سفارش ترجمه

Effect of Cu or Co addition on β-FeSi2 growth by molten salt method

Keywords: A1 ناخالصی ها; A1. Diffusion; A1. Impurities; A2. Growth from solutions; B2. Semiconducting silicon compounds;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2012 سفارش ترجمه

A kinetic model of the formation and growth of interstitial dislocation loops in dislocation free silicon single crystals

Keywords: A1 ناخالصی ها; A1. Defects; A1. Impurities; A1. Point defects; B2. Semiconducting silicon

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2012 سفارش ترجمه

MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate

Keywords: A1 ناخالصی ها; A1. Impurities; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium compounds; B3. High electron mobility transistors

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2012 سفارش ترجمه

Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs

Keywords: A1 ناخالصی ها; A1. Doping; A1. Impurities; A1. Interfaces; A3. Hydride vapor phase epitaxy; B2. Semiconducting gallium arsenide; B3. Solar cells

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2012 سفارش ترجمه

Numerical investigation of oxygen impurity distribution during multicrystalline silicon crystal growth using a gas flow guidance device

Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2012 سفارش ترجمه

Systematic characterization of multi-crystalline silicon String Ribbon wafer

Keywords: A1 ناخالصی ها; A1. Characterization; A1. Defects; A1. Impurities; A2. String ribbon; B2. Multi-crystalline silicon ribbon

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2012 سفارش ترجمه

The deviation from a stoichiometry and the amphoteric behaviour of Ga in PbTe/Si films

Keywords: A1 ناخالصی ها; A1. Crystal structure; A1. Doping; A1. Impurities; A1. Point defects; A3. Hot wall epitaxy; B2. Semiconducting lead compounds;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2012 سفارش ترجمه

Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal-melt interface during the process of Czochralski silicon crystal growth

Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2012 سفارش ترجمه

Characterization of mc-Si directionally solidified in travelling magnetic fields

Keywords: A1 ناخالصی ها; A1. Directional solidification; A1. Magnetic fields; A1. Impurities; A2. Vertical gradient freeze; B2. Multi-crystalline silicon

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2012 سفارش ترجمه

Peculiarities of the growth of KDP single crystals with incorporated aluminium oxyhydroxide nanoparticles

Keywords: A1 ناخالصی ها; A1. Impurities; A2. Growth from solutions; A2. Single crystal growth; B1. KDP; B1. Nanostructured aluminium oxihydroxide; B2. Nonlinear optical materials

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2012 سفارش ترجمه

Chemical bulk properties of multicrystalline silicon ingots for solar cells cast in silicon nitride crucibles

Keywords: A1 ناخالصی ها; A1. Diffusion; A1. Directional solidification; A1. Doping; A1. Impurities; B1. Silicon nitride; B2. Semiconducting silicon;

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2012 سفارش ترجمه

Influence of impurities on the crystallization of dextrose monohydrate

Keywords: A1 ناخالصی ها; A1. Impurities; A1. Nucleation; A1. Solubility; A2. Growth from solution; B1. Dextrose monohydrate

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2012 سفارش ترجمه

Influence of carbon coated pBN crucible on crystal growth of Cd0.9Zn0.1Te for radiation detector applications

Keywords: A1 ناخالصی ها; A1. Gradient freeze technique; A1. Impurities; B1. Cadmium compounds; B1. Nitrides;

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2012 سفارش ترجمه

Complex formation and background impurity of Oxygen in the PbTe:Eu doped crystals grown from melt by the Bridgman method

Keywords: A1 ناخالصی ها; A1. Characterization; A1. Doping; A1. Impurities; A1. Magnetic fields; A2. Growth from melt; B2. Semiconducting lead compounds;

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2012 سفارش ترجمه

Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth

Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Convection; A1. Impurities; A1. Interfaces; A2. Magnetic field assisted Czochralski method;

دانلود رایگان متن کامل مقاله ISI 8 صفحه سال انتشار : 2012 سفارش ترجمه

Investigating vaterite phase stabilisation by a tetrazole molecule during calcium carbonate crystallisation

Keywords: A1 ناخالصی ها; A1. Adsorption; A1. Biocrystallization; A1. Characterisation; A1. Impurities; A2. Growth from solutions; B1. Calcium compounds

دانلود رایگان متن کامل مقاله ISI 8 صفحه سال انتشار : 2012 سفارش ترجمه

Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties

Keywords: A1 ناخالصی ها; A1. Impurities; A1. Optical properties; A2. Growth from vapor; B1. Aluminum nitride

دانلود رایگان متن کامل مقاله ISI 9 صفحه سال انتشار : 2012 سفارش ترجمه

Sucrose crystal growth in the presence of dextran of different molecular weights

Keywords: A1 ناخالصی ها; A1. Impurities; A1. Surface structure; A2. Growth from solutions; B1. Sucrose;

دانلود رایگان متن کامل مقاله ISI 9 صفحه سال انتشار : 2012 سفارش ترجمه

Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace

Keywords: A1 ناخالصی ها; A1. Directional solidification; A1. Impurities; A1. Computer simulation; B2. Semiconducting silicon;

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2011 سفارش ترجمه

Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3

Keywords: A1 ناخالصی ها; A1. Impurities; A2. Single crystal growth; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2011 سفارش ترجمه

Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition

Keywords: A1 ناخالصی ها; A1. Characterization; A1. Impurities; A1. Surfaces; A3. Metal organic chemical vapor deposition; B1. Nitrides; B2. Semiconducting indium compounds

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2011 سفارش ترجمه

Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon

Keywords: A1 ناخالصی ها; A1. Segregation; A1. Numerical simulation; A1. Impurities; A2. Growth from melt; A2. Accelerated crucible rotation technique; B3. Solar cell;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2011 سفارش ترجمه

The effect of graphite components and crucible coating on the behaviour of carbon and oxygen in multicrystalline silicon

Keywords: A1 ناخالصی ها; A1. Directional solidification; A1. Impurities; A2. Bridgman technique; B2. Multicrystalline silicon;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2011 سفارش ترجمه

Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process

Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2011 سفارش ترجمه

Incorporation of Cr-containing anionic species into potassium dihydrogen phosphate crystal

Keywords: A1 ناخالصی ها; A1. Absorption; A1. Crystal morphology; A1. Impurities; A2. Grown from solutions;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2011 سفارش ترجمه

Numerical simulation of oxygen transport during the CZ silicon crystal growth process

Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2011 سفارش ترجمه

Coefficients, D2/1 of cocrystallization of M2+ ions with ZnSeO4·5H2O at 40 °C and ZnSeO4·H2O at 50 °C and their dependences on various physicochemical and crystal-chemical factors

Keywords: A1 ناخالصی ها; A1. Cocrystallization; A1. Distribution coefficient (Henderson-Kraček, Chlopin); A1. Impurities; A1. Purification; B1. Zinc selenate hydrates selenates;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2011 سفارش ترجمه

Effect of steady crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon

Keywords: A1 ناخالصی ها; A1. Convection; A1. Impurities; A1. Numerical simulation; A1. Segregation; A2. Growth from melt; B3. Solar cell

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2011 سفارش ترجمه

Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace

Keywords: A1 ناخالصی ها; A1. Impurities; A1. Directional solidification; B2. Semiconducting silicon; B3. Solar cells

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2011 سفارش ترجمه

Rod-shaped barium sulfate particles from a completely inorganic system

Keywords: A1 ناخالصی ها; A1. Crystal morphology; A1. Impurities; A2. Growth from solutions; B1. Barium compounds; B1. Salts;

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2011 سفارش ترجمه

Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells

Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Gas flow; A1. Impurities; A1. Directional solidification; B3. Solar cells;

دانلود رایگان متن کامل مقاله ISI 9 صفحه سال انتشار : 2011 سفارش ترجمه

Thick homoepitaxial GaN with low carrier concentration for high blocking voltage

Keywords: A1 ناخالصی ها; A1. Characterization; A1. Impurities; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconductors III-V materials;

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2010 سفارش ترجمه

Estimated effects of silicone glue on protein crystal growth

Keywords: A1 ناخالصی ها; A1. Impurities; A1. Optical microscopy; A1. Surface processes; A2. Growth from solutions; B1. Lysozyme; B1. Protein

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2010 سفارش ترجمه

Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth

Keywords: A1 ناخالصی ها; A1. Computer simulation; A1. Impurities; A1. Mass transfer; A1. Fluid flows; A2. Czochralski method

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2010 سفارش ترجمه

Impurity segregation in directional solidified multi-crystalline silicon

Keywords: A1 ناخالصی ها; A1. Segregation; A1. Convection; A1. Numerical simulation; A1. Impurities; A2. Growth from melt; B3. Solar cell

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2010 سفارش ترجمه

Optical probing of low-pressure solution grown GaN crystal properties

Keywords: A1 ناخالصی ها; A1. Characterization; A1. Growth from solution; A1. Impurities; A2. Single crystal growth; B1. Nitrides

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2010 سفارش ترجمه

Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

Keywords: A1 ناخالصی ها; A1. Directional solidification; A1. Impurities; A1. Computer simulation; B2. Semiconducting silicon; B3. Solar cells

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2010 سفارش ترجمه

Unidirectional growth of sulphamic acid single crystal and its quality analysis using etching, microhardness, HRXRD, UV-visible and Thermogravimetric-Differential thermal characterizations

Keywords: A1 ناخالصی ها; A1. Defects; A1. Etching; A1. High-resolution X-ray diffraction; A1. Impurities; A2. Growth from solutions; A2. Single crystal growth;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2010 سفارش ترجمه

Factors influencing the purity of electronic grade phosphine delivered to MOCVD tools

Keywords: A1 ناخالصی ها; A1. Impurities; A1. Low temperature photoluminescence; A1. Mobility; A3. Metalorganic chemical vapor deposition; B1. Phosphine; B2. Indium phosphide;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2010 سفارش ترجمه

Phosphorus gettering of precipitated Cu in single crystalline silicon based on rapid thermal process

Keywords: A1 ناخالصی ها; A1. Impurities; A1. Phosphorus gettering; B2. Semiconducting silicon; B3. Solar cells;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2010 سفارش ترجمه

Influence of some foreign metal ions on crystal growth kinetics of brushite (CaHPO4·2H2O)

Keywords: A1 ناخالصی ها; A1. Impurities; A1. Surface processes; A2. Growth from solutions; B1. Calcium compounds; B1. Phosphates

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2010 سفارش ترجمه

Model development for deactivation of bisphenol-A adduct particles during crystallization under the influence of impurity

Keywords: A1 ناخالصی ها; A1. Mathematical modeling; A1. Impurities; A2. Growth from solution; A2. Industrial crystallization; B1. Bisphenol-A

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2010 سفارش ترجمه

About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock

Keywords: A1 ناخالصی ها; A1. Directional solidification; A1. Impurities; A1. Mass transfer; A2. Vertical gradient freeze; B2. Multi-crystalline silicon; B3. Solar cells

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2010 سفارش ترجمه

Conventional slow evaporation and Sankaranarayanan–Ramasamy (SR) method grown diglycine zinc chloride (DGZC) single crystal and its comparative study

Keywords: A1 ناخالصی ها; A1. Directional solidification; A1. Impurities; A1. Optical microscopy; A1. X-ray diffraction; A2. Growth from solutions; B2. Nonlinear optic materials

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2010 سفارش ترجمه

Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters

Keywords: A1 ناخالصی ها; A1. Numerical simulation; A1. Directional solidification; A1. Impurities; A1. Mass transfer; A2. Vertical gradient freeze; B2. Multi-crystalline silicon

دانلود رایگان متن کامل مقاله ISI 8 صفحه سال انتشار : 2010 سفارش ترجمه

The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon

Keywords: A1 ناخالصی ها; A1. Directional solidification; A1. Growth rate; A1. Impurities; A1. SiC, Si3N4 Precipitates; A2. Vertical gradient freeze; B2. Multi-crystalline silicon

دانلود رایگان متن کامل مقاله ISI 8 صفحه سال انتشار : 2010 سفارش ترجمه

Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism

Keywords: A1 ناخالصی ها; A1. Impurities; A1. Doping; A1. SIMS; A2. Growth from melt; A3. Liquid phase epitaxy; B2. Silicon carbide

دانلود رایگان متن کامل مقاله ISI 8 صفحه سال انتشار : 2010 سفارش ترجمه