کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793071 | 1023664 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Unidirectional growth of sulphamic acid single crystal and its quality analysis using etching, microhardness, HRXRD, UV-visible and Thermogravimetric-Differential thermal characterizations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A uniaxial sulphamic acid single crystal having dimensions of 35Â mm diameter and 150Â mm length was grown. Employing slow evaporation technique sulphamic acid crystals of size 10Ã10Ã5Â mm3 were grown. Etching, microhardness, high-resolution X-ray diffraction, laser damage threshold, UV-visible, Thermogravimetric and differential thermal analysis were made on conventional and the Sankaranarayanan-Ramasamy method grown sulphamic acid crystals. Etching behaviour of the (1Â 0Â 0) plane of conventional and the Sankaranarayanan-Ramasamy method grown sulphamic acid crystals was investigated with different etchants. Vicker's microhardness test on the (1Â 0Â 0) plane confirmed the mechanical stability of the conventional and the Sankaranarayanan-Ramasamy method grown sulphamic acid crystals. High-resolution X-ray diffraction results show that the crystalline perfection of sulphamic acid single crystals grown by the Sankaranarayanan-Ramasamy method is extremely good compared to the conventional slow evaporation method grown sulphamic acid crystal. Thermogravimetric and differential thermal analysis was carried out to determine the thermal properties of the grown crystal.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 3, 15 January 2010, Pages 397-401
Journal: Journal of Crystal Growth - Volume 312, Issue 3, 15 January 2010, Pages 397-401
نویسندگان
M. Senthil Pandian, Urit Charoen In, P. Ramasamy, Prapun Manyum, M. Lenin, N. Balamurugan,