کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793325 1023672 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells
چکیده انگلیسی

An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 9, 15 April 2010, Pages 1572–1576
نویسندگان
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