A kinetic model of the formation and growth of interstitial dislocation loops in dislocation free silicon single crystals

A kinetic model of the formation and growth of dislocation loops in course of consequent as-grown crystal's cooling has been proposed It demonstrates that dislocation loops are formed following the processes of high-temperature precipitation of background oxygen and carbon impurities during crystal growth. Elastic deformation caused by growing precipitate is released due to the formation and growth of dislocation loops. Interstitial dislocation loops are formed, when the crystal growth ratio is Vg/G<ξcrit. We have compared the kinetic model calculation data with the experimental research findings related to the formation of dislocation loops.

► High-temperature precipitation impurities during crystal growth.
► Precipitates as a source of interstitial dislocation loops.
► Kinetic model of formation dislocation loops during cooling after crystal growth.