Keywords: A1 نقص نقطه; A1. Defects; A1. Point defects; A2. Czochralski method; B2. Semiconducting silicon;
مقالات ISI A1 نقص نقطه (ترجمه نشده)
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Keywords: A1 نقص نقطه; A1. Computer simulation; A1. Line defects; A1. Point defects; B2. Semiconducting silicon
Keywords: A1 نقص نقطه; A1. Crystal morphology; A1. Point defects; A2. Single crystal growth; A2. High pressure and high temperature; B1. Diamond
Keywords: A1 نقص نقطه; A1. Computer simulation; A1. Point defects; A2. Bridgman technique; Semiconducting cadmium compounds;
Reduction of threading dislocation density in SiGe epilayer on Si (0â¯0â¯1) by lateral growth liquid-phase epitaxy
Keywords: A1 نقص نقطه; A1. Line defects; A1. Point defects; A3. Liquid phase epitaxy; B1. Germanium silicon alloys;
Defects subsystem and homogeneity region of ZnTe and CdTe crystals
Keywords: A1 نقص نقطه; A1. Point defects; A1. Crystal structure; A1. Computer simulation; B2. Semiconducting II-VI materials;
Transition metal doping of GaSe implemented with low temperature liquid phase growth
Keywords: A1 نقص نقطه; A1. Point defects; A2. Growth from melt; A3. Liquid phase epitaxy; B1. Gallium compounds; B2. Semiconducting gallium compounds; B3. Nonlinear optical;
Growth of p-type ZnOS films by pulsed laser deposition
Keywords: A1 نقص نقطه; A1. Point defects; A3. Physical vapor deposition processes; B1. Oxides; B2. Semiconducting II-VI materials;
Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging
Keywords: A1 نقص نقطه; A1. Characterisation; A1. Photoluminescence imaging; A1. Metal precipitates; A1. Point defects; A1. Doping; B2. Semiconducting silicon;
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
Keywords: A1 نقص نقطه; A1. Crystal morphology; A1. Impurities; A1. Point defects; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides
Free energy landscape approach to aid pure phase synthesis of transition metal (X=Cr, Mn and Fe) doped bismuth titanate (Bi2Ti2O7)
Keywords: A1 نقص نقطه; A1. Doping; A1. Phase diagrams; A1. Point defects; A2. Single crystal growth; B1. Titanium compounds; B2. Semiconducting ternary alloys
Efficient computation of population distribution of microdefects at any location in growing Czochralski silicon single crystals
Keywords: A1 نقص نقطه; A1. Defects; A1. Point defects; A1. Size distribution; A2. Czochralski method; B1. Nucleation; B1. Semiconducting silicon; Microdefects;
Numerical and experimental studies on the Black Periphery Wafer in CZ Si growth
Keywords: A1 نقص نقطه; A1. Black Periphery Wafer; A1. OSF-ring; A1. Point defects; A1. Numerical simulation; A1. Oxygen and carbon; B2. CZ Si;
The effect of structural vacancies on the twins in defect zinc-blende crystal Hg3In2Te6 grown by Bridgman method
Keywords: A1 نقص نقطه; A1. Planar defects; A1. Point defects; A2. Bridgman technique; B2. Semiconducting mercury compounds; B2. Semiconducting ternary compounds;
Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
Keywords: A1 نقص نقطه; A1. Doping; A1. Point defects; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer
Keywords: A1 نقص نقطه; A1. Defects; A1. Impurities; A1. Point defects; A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting silicon
Synthesis and growth of ZnGeP2 crystals: Prevention of non-stoichiometry
Keywords: A1 نقص نقطه; A1. Point defects; A2. Bridgman technique; A2. Growth from melts; A2. Single crystal growth; B2. Nonlinear optic materials.
Electrical properties of point defects in cadmium zinc telluride
Keywords: A1 نقص نقطه; A1. Complexes; A1. Electronic levels; A1. Intrinsic defects; A1. Point defects; B1. Cadmium compounds
Growing technology and luminescent characteristics of ZnSe doped crystals
Keywords: A1 نقص نقطه; A1. Isovalent dopant; A1. Luminescence center; A1. Point defects; B1. ZnSe; B3. Radiation instruments; B3. Scintillators
Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles
Keywords: A1 نقص نقطه; A1. Characterization; A1. Defects; A1. Growth models; A1. Point defects; B1. Oxides; B2. Semiconducting silicon
Anion vacancies in II–VI chalcogenides: Review and critical analysis
Keywords: A1 نقص نقطه; A1. Point defects; A1. Doping; B2. Semiconducting II–VI compounds; B2. Scintillator materials
Point defects in Cd(Zn)Te and TlBr: Theory
Keywords: A1 نقص نقطه; A1. Computer simulation; A1. Diffusion; A1. Doping; A1. Point defects; B1. Halides; B2. Semiconducting materials
Study on annealing of infrared nonlinear optical crystal ZnGeP2
Keywords: A1 نقص نقطه; A1. Point defects; A1. Optical spectra; A2. Single-zone-annealing; A2. Two-zone-annealing; B2. Nonlinear optical crystals
Annealing of indium-doped CdMnTe single crystals under Cd vapors
Keywords: A1 نقص نقطه; A1. Characterization; A1. Point defects; A2. Bridgman technique; B2. Semiconducting II–VI materials
Magnetic and optical properties of virgin arc furnace grown MgO crystals
Keywords: A1 نقص نقطه; A1. Point defects; A1. Photoluminescence; A1. Magnetism; B1. MgO; B2. Magneto-optic materials
A kinetic model of the formation and growth of interstitial dislocation loops in dislocation free silicon single crystals
Keywords: A1 نقص نقطه; A1. Defects; A1. Impurities; A1. Point defects; B2. Semiconducting silicon
The deviation from a stoichiometry and the amphoteric behaviour of Ga in PbTe/Si films
Keywords: A1 نقص نقطه; A1. Crystal structure; A1. Doping; A1. Impurities; A1. Point defects; A3. Hot wall epitaxy; B2. Semiconducting lead compounds;
Study of the effects of Ga3+ co-doping on the Lu0.8Sc0.2BO3:Ce scintillation crystals
Keywords: A1 نقص نقطه; A1. Co-doping; A1. Point defects; A2. Czochralski method; B2. Scintillator materials;
The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon
Keywords: A1 نقص نقطه; A1. Codoping; A1. Point defects; A2. Czochralski method; B2. Semiconductor silicon
Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth
Keywords: A1 نقص نقطه; A1. Point defects; A1. Doping impurities; A1. Nitrogen molecule; A1. Diffusion coefficient; A1. Covalent bonding radius; A2. Growth from melt;
Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results
Keywords: A1 نقص نقطه; A1. Growth interface shape; A1. Growth rate; A1. Point defects; A1. Strain relaxation; A1. Thermal gradient; A2. Growth from melt;
Defect levels and thermomigration of Te precipitates in CdZnTe:Pb
Keywords: A1 نقص نقطه; A1. Doping; A1. Point defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD
Keywords: A1 نقص نقطه; A1. High resolution X-ray diffraction; A1. Point defects; A3. Metal-organic chemical vapor deposition; B2. Semiconducting III–V materials
Optical and EPR study of point defects in CdSiP2 crystals
Keywords: A1 نقص نقطه; A1. Point defects; A2. Gradient freeze technique; B2. Nonlinear optical materials;
Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations
Keywords: A1 نقص نقطه; 02.60.Cb; 61.50.Ah; 81.10.âh; 81.40.Jj; A1. Computer simulation; A1. Point defects; A1. Solidification; A2. Single crystal growth;
Quality and thermal stability of thin InGaN films
Keywords: A1 نقص نقطه; 61.72.J−; 78.55.CR; 78.67.DeA1. Diffusion; A1. Thermal stability; A1. Point defects; A3. Quantum wells; B1. InGaN; B3. Laser diodes
Point defects in group-III nitride semiconductors studied by positron annihilation
Keywords: A1 نقص نقطه; 61.72.Ji; 68.55.Ln; 78.70.BjA1. Characterization; A1. Doping; A1. Point defects; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials
Vacancy behavior in Czochralski silicon growth
Keywords: A1 نقص نقطه; 61.50.Ah; 61.72.Cc; 61.72.jdA1. Computer simulation; A1. Diffusion; A1. Kinetic lattice Monte Carlo; A1. Point defects; B2. Semiconducting silicon
Characterization of bulk AlN crystals with positron annihilation spectroscopy
Keywords: A1 نقص نقطه; 61.72.jd; 71.55.Eq; 78.70.Bj; 81.10.BkA1. Characterization; A1. Point defects; A2. Growth from vapor; B1. Nitrides; B2. Semiconducting aluminum compounds
Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance
Keywords: A1 نقص نقطه; 61.72.Ji; 76.70.Hb; 78.55.−m; 78.55.EtA1. Characterization; A1. Point defects; B1. Zinc compounds; B2. Semiconducting II–VI materials
Optical properties of bulk GaN crystals grown from solution at moderate pressure and temperature
Keywords: A1 نقص نقطه; 78.40.FY; 71.70.Ch; 78.55.−m; 71.35.−y; 81.05.Ea; 78.30.FsA1. Characterization; A1. Impurities; A1. Point defects; A2. Growth from high temperature solutions; A2. Single crystal growth; B1. Nitrides
Technological approaches for improving thermoluminescent properties of the Czochralski-grown YAlO3:Mn crystals
Keywords: A1 نقص نقطه; 81.10.Fq; 78.60.Kn; 78.40.âq; 81.40.Tv; A1. Point defects; A2. Czochralski method; B1. Perovskites; B1. Yttrium compounds; B2. Phosphors;
Distribution of zinc, resistivity, and photosensitivity in a vertical Bridgman grown Cd1−xZnxTe ingot
Keywords: A1 نقص نقطه; A1. Point defects; A2. Bridgman technique; B1. Semiconducting II–VI materials
Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitials
Keywords: A1 نقص نقطه; 61.72.–y; 61.72.Ji; 61.72.Cc; 61.82.FkA1. Computer simulation; A1. Impurities; A1. Nucleation; A1. Point defects; A1. Volume defects; B2. Semiconducting silicon
Lateral incorporation of vacancies in Czochralski silicon crystals
Keywords: A1 نقص نقطه; 81.10.Fq; 81.10.Aj; 81.05.Cy; 61.72.Yx; 61.72.Jd; 61.72.Jj; 61.72.Cc; 61.82.FkA1. Defects; A1. Impurities; A1. Microdefects; A1. Nucleation; A1. Point defects; A2. Czhochralski method B2. Semiconducting silicon
Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals
Keywords: A1 نقص نقطه; 81.10.Fq; 81.10.Aj; 81.05.Cy; 61.72.Yx; 61.72.Jd; 61.72.Jj; 61.72.Cc; 61.82.FkA1. Defects; A1. Nucleation; A1. Point defects; A1. Microdefects; A1. Impurities; A2. Czhochralski method; B2. Semiconducting silicon
Properties of low-temperature-grown InAs and their changes upon annealing
Keywords: A1 نقص نقطه; 73.61.Ey; 61.72.Cc; 81.05.Ea; 81.15.Hi; A1. Point defects; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBE
Keywords: A1 نقص نقطه; 61.72.Cc; 81.15.Hi; 81.05.Ea; 68.65.Fg; 81.40.âz; A1. Point defects; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials;
Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method
Keywords: A1 نقص نقطه; 61.72.S; 68.55.L; 71.55.H; A1. Point defects; A2. Growth from vapor; A3. Physical vapor deposition processes; B2. Semiconducting silicon compounds;
Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing
Keywords: A1 نقص نقطه; 61.72.Tt; 61.72.Cc; 71.55.CnA1. Doping; A1. Germanium; A1. Point defects; A2. Czochralski method; A2. Single crystal growth; B2. Semiconductor silicon