Point defects in Cd(Zn)Te and TlBr: Theory

The effects of various crystal defects on the performances of CdTe, Cd1−xZnxTeCd1−xZnxTe (CZT), and TlBr for room-temperature high-energy radiation detection are examined using first-principles theoretical methods. The predictive, parameter-free, atomistic approaches used provide fundamental understanding of defect properties that are difficult to measure and also allow rapid screening of possibilities for material engineering, such as optimal doping and annealing conditions. Several recent examples from the author's work are reviewed, including: (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties in CZT; (iii) point defect diffusion and binding leading to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects—principally vacancies—on the intrinsic material properties of TlBr, particularly its electronic and ionic conductivity; and (v) a study on doping TlBr to independently control the electronic and ionic conductivity.

► Native point defects contribute to carrier compensation and carrier life-times in CdTe.
► Native point defects contribute to Te clustering in Cd(Zn)Te.
► Zn alloying only weakly modifies point defect properties in CdZnTe.
► Vacancies in TlBr cause high resistivity, long carrier lifetimes, and ionic current.
► Acceptor–donor co-doping can reduce ionic mobility in TlBr.