کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1790870 1524450 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical properties of point defects in cadmium zinc telluride
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electrical properties of point defects in cadmium zinc telluride
چکیده انگلیسی


• We shortly review the state-of-the-art knowledge on the electrical properties of point defects in CZT.
• Electronic levels associated with point defects in cadmium zinc telluride.
• Point defects.

Cadmium zinc telluride, CdZnTe or CZT, is presently the best candidate for radiation detectors since it can operate at room temperature and in hostile environment. In recent years, advancements of the crystal growth methods and subsequent processes, as for example thermal treatments, have led to an increasing quality of the material. However, the major obstacle to optimize detectors' performance still consists in the defects, both grown-in and processing-induced, which seem to be inevitably present. In this contribution, we present the state-of-the-art of the knowledge on the electrical properties of defects in Cd(1−x)ZnxTe with zinc content x=0.1–0.2, focusing on point defects due to intrinsic defects or their complexes.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 379, 15 September 2013, Pages 41–45
نویسندگان
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