Keywords: B1 ترکیبات کادمیوم; A1. Computer simulation; A2. Bridgman technique; B1. Cadmium compounds
مقالات ISI B1 ترکیبات کادمیوم (ترجمه نشده)
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Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors
Keywords: B1 ترکیبات کادمیوم; A1. Characterization; A2. Bridgman technique; B1. Cadmium compounds; B2 Semiconducting II-VI materials;
Generation of 320â¯mW at 10.20â¯Î¼m based on CdSe long-wave infrared crystal
Keywords: B1 ترکیبات کادمیوم; A2. Gradient freeze technique; B1. Cadmium compounds; B2. Nonlinear optic materials; B3. Nonlinear optical;
Compensated donors in semi-insulating Cd1âxMnxTe:In crystals
Keywords: B1 ترکیبات کادمیوم; A1. Electrical characteristics; A1. Heat treatment; A1. Activation energy; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Hg1âxCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique
Keywords: B1 ترکیبات کادمیوم; A3. Physical vapor deposition processes; B1. Cadmium compounds; B1. CdZnTe; B1. HgCdTe; B2. Semiconducting materials; B3. Infrared devices;
Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing
Keywords: B1 ترکیبات کادمیوم; A1. Line defects; A1. Substrates; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting ternary compounds;
Direct observation of influence of secondary-phase defects on CZT detector response
Keywords: B1 ترکیبات کادمیوم; A1. Defects; A1. Characterization; A1. Etching; A1. High resolution X-ray diffraction; B1. Cadmium compounds; B2. Semiconducting cadmium compounds;
Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source
Keywords: B1 ترکیبات کادمیوم; A1. Thermodynamic properties; A3. Vapor phase epitaxy; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Compensation processes in high-resistivity CdZnTe crystals doped with In/Al
Keywords: B1 ترکیبات کادمیوم; A1. Defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Small angle X-ray and neutron scattering on cadmium sulfide nanoparticles in silicate glass
Keywords: B1 ترکیبات کادمیوم; A1. Nanostructures; A1. Small angle scattering; B1. Glasses; B1. Sulfides; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Quality improvement of CdMnTe:In single crystals by an effective post-growth annealing
Keywords: B1 ترکیبات کادمیوم; A1. Characterization; A2. Bridgman technique; B1. Cadmium compounds; B2 Semiconducting II–VI materials
Measurement of the diffusivity of CdTe in liquid Te at crystal growth temperatures
Keywords: B1 ترکیبات کادمیوم; A1. Diffusion; A1. Mass transfer; A2. Growth from solutions; B1. Cadmium compounds;
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals
Keywords: B1 ترکیبات کادمیوم; A1. Volume defects; A1. Radiation detectors; B1. Cadmium compounds; B2. Semiconducting II/VI materials; B2. CdZnTe;
Investigation of Te atmosphere annealing on the properties of detector-grade CdMnTe:In single crystals
Keywords: B1 ترکیبات کادمیوم; A1. Characterization; A2. Bridgman Technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Study on third order nonlinear optical properties of a metal organic complex-Monothiourea-cadmium Sulphate Dihydrate single crystals grown in silica gel
Keywords: B1 ترکیبات کادمیوم; A1. Atomic force microscopy; A2. Single crystal growth; B1. Cadmium compounds; B3. Nonlinear optical;
Nonstoichiometric composition shift in physical vapor deposition of CdTe thin films
Keywords: B1 ترکیبات کادمیوم; A1. Growth models; A3. Physical vapor deposition processes; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Transient segregation behavior in Cd1âxZnxTe with low Zn content-A qualitative and quantitative analysis
Keywords: B1 ترکیبات کادمیوم; A1. Segregation; A1. Solidification; A2. Bridgman technique; A2. Growth from melt; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Influence of rotating magnetic fields on THM growth of CdZnTe crystals under microgravity and ground conditions
Keywords: B1 ترکیبات کادمیوم; A1. Computer simulation; A1. Magnetic fields; A2. Traveling solvent zone growth; A2. Microgravity conditions; B1. Cadmium compounds;
MOCVD for solar cells, a transition towards a chamberless inline process
Keywords: B1 ترکیبات کادمیوم; A3. Metalorganic chemical vapour deposition; B1. Cadmium compounds; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II-VI materials; B3. Photovoltaic solar cells;
Prismatic punching defects in CdTe compounds
Keywords: B1 ترکیبات کادمیوم; A1. Defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Growth of CdWO4 crystals by the low thermal gradient Czochralski technique and the properties of a (010) cleaved surface
Keywords: B1 ترکیبات کادمیوم; A1. Atomic force microscopy; A1. Surface structure; A2. Czochralski method; B1. Cadmium compounds; B1. Tungstates
Numerical modeling of CdTe crystallization from Te solution under terrestrial and microgravity conditions
Keywords: B1 ترکیبات کادمیوم; A1. Computer simulation; A2. Traveling solvent zone growth; A2. Microgravity conditions; B1. Cadmium compounds
Migration of Te inclusions in CdZnTe single crystals under the temperature gradient annealing
Keywords: B1 ترکیبات کادمیوم; A1. Diffusion; A1. Te inclusions; B1. Cadmium compounds; B2. CdZnTe; B3. Radiation detectors;
Observation, morphology evolution and elimination of Te inclusions in CdZnTe:In single crystals
Keywords: B1 ترکیبات کادمیوم; A1. Defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Study on Te atmosphere annealing of high-resistivity CdZnTe:In single crystals
Keywords: B1 ترکیبات کادمیوم; A1. Characterization; A2. Bridgman Technique; B1. Cadmium compounds; B2 Semiconducting II-VI materials;
Carrier dynamics and activation energy of CdTe/ZnTe nanostructures with different CdTe thicknesses
Keywords: B1 ترکیبات کادمیوم; A1. Low dimensional structures; A1. Nanostructures; A3. Atomic layer epitaxy; A3. Molecular beam epitaxy; B1. Cadmium compounds; B2. Semiconducting II–VI materials
MBE growth and characterization of a II-VI distributed Bragg reflector and microcavity lattice-matched to MgTe
Keywords: B1 ترکیبات کادمیوم; A3. Molecular beam epitaxy; B1. Cadmium compounds; B1. Zinc compounds; B2. Semiconducting II-VI materials; B1. Tellurides; B2. Magneto-optic materials;
Ultra low density of CdTe quantum dots grown by MBE
Keywords: B1 ترکیبات کادمیوم; A3. Atomic layer epitaxy; A3. Molecular beam epitaxy; B1. Cadmium compounds; B1. Zinc compounds; B1. Tellurides; B2. Semiconducting II–VI materials
Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors
Keywords: B1 ترکیبات کادمیوم; A1. Defect; A1. Radiation detectors; B1. Cadmium compounds; B2. CdZnTe; B2 Semi-conducting II–VI materials
Electrical properties of point defects in cadmium zinc telluride
Keywords: B1 ترکیبات کادمیوم; A1. Complexes; A1. Electronic levels; A1. Intrinsic defects; A1. Point defects; B1. Cadmium compounds
Pt coldfinger improves quality of Bridgman-grown Cd0.9Zn0.1Te:Bi crystals
Keywords: B1 ترکیبات کادمیوم; A1. Crystal structure; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Temperature-gradient annealing of CdZnTe under Te overpressure
Keywords: B1 ترکیبات کادمیوم; A1. X-ray topography; A1. Defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Etch pits of precipitates in CdZnTe crystals on (1Â 1Â 1) B surface
Keywords: B1 ترکیبات کادمیوم; A1. Etching; A1. Volume defects; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd0.9Zn0.1Te
Keywords: B1 ترکیبات کادمیوم; A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting cadmium compounds; B2. Semiconducting II–VI materials
Synthesis of CdSe nanoparticles immersed in an organic matrix of amylopectin by means of rf sputtering
Keywords: B1 ترکیبات کادمیوم; A1. Nanostructures; A2. Growth from melt; B1. Cadmium compounds; B2. Semiconducting cadmium compounds
Growth of CdS nanosheets and nanowires through the solvothermal method
Keywords: B1 ترکیبات کادمیوم; A1. Nanostructures; B1. Cadmium compounds; Hydrothermal crystal
Influence of carbon coated pBN crucible on crystal growth of Cd0.9Zn0.1Te for radiation detector applications
Keywords: B1 ترکیبات کادمیوم; A1. Gradient freeze technique; A1. Impurities; B1. Cadmium compounds; B1. Nitrides;
Influence of dynamic temperature adjustments during growth on the material properties of CZT radiation devices
Keywords: B1 ترکیبات کادمیوم; A1. Characterization; A1. Defects; A2. Gradient freeze technique; B1. Cadmium compounds
Investigation on a two-pot solvothermal route for preparing high quality CdSe QDs
Keywords: B1 ترکیبات کادمیوم; A1. Characterization; A1. X-ray diffraction; B1. Cadmium compounds; B1. Nanomaterials; B1. Semiconducting II–VI materials
A temperature dependant crystal orientation transition of cadmium oxide films deposited by metal organic chemical vapour deposition
Keywords: B1 ترکیبات کادمیوم; A1. Crystal morphology; A3. Metal organic chemical vapour deposition; B1. Oxides; B1. Cadmium compounds; B2. Semiconducting cadmium compounds; B3. Solar cells;
Characterization of detector-grade CdZnTe:Al crystals obtained by annealing
Keywords: B1 ترکیبات کادمیوم; A1. Defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Low temperature growth of metastable cubic CdSe nanocrystals and their photoluminescence properties
Keywords: B1 ترکیبات کادمیوم; A1. Crystal structures; A1. Nanostructures; A2. Growth from solutions; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
CdSe quantum dots grown on a Zn0.2Mg0.8S0.64Se0.36 barrier: MBE growth and μ-PL characterisation
Keywords: B1 ترکیبات کادمیوم; A1. Optical microscopy; A3. Molecular beam epitaxy; B1. Cadmium compounds; B2. Semiconducting II-VI materials; B2. Semiconducting quaternary alloys;
Characteristics of the dislocations in CdZnTe crystals revealed by etch pits
Keywords: B1 ترکیبات کادمیوم; A1. Line defects; A1. Etching; B1. Cadmium compounds; B2. Semiconducting II–VI materials
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy
Keywords: B1 ترکیبات کادمیوم; A1. Reflection high-energy electron diffraction; A1. X-ray diffraction; A1. Atomic force microscopy; A3. Molecular beam epitaxy; B1. Cadmium compounds; B2 Semiconducting II–VI materials
Electron backscatter diffraction analysis of a CZT growth tip from a vertical gradient freeze furnace
Keywords: B1 ترکیبات کادمیوم; A1. Crystal structure; A1. Defects; A1. Growth models; A2. Gradient freeze technique; B1. Cadmium compounds; B2. Semiconducting ternary compounds
Effect of target-substrate separation on HgCdTe films formed by pulsed laser deposition
Keywords: B1 ترکیبات کادمیوم; A1. Crystal structures; A3. Laser epitaxy; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Defect levels and thermomigration of Te precipitates in CdZnTe:Pb
Keywords: B1 ترکیبات کادمیوم; A1. Doping; A1. Point defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation
Keywords: B1 ترکیبات کادمیوم; A1. Crystal structure; A1. X-ray diffraction; A1. Defects; A3. Polycrystalline deposition; B1. Cadmium compounds
Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1)
Keywords: B1 ترکیبات کادمیوم; A1. Defects; A1. Substrates; A3. Molecular beam epitaxy; B1. Cadmium compounds; B2. Semiconducting II–VI materials