کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1791403 1524468 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd0.9Zn0.1Te
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd0.9Zn0.1Te
چکیده انگلیسی

Defects exhibiting trapping behaviors in semi-insulating (SI) materials were investigated by thermally stimulated current (TSC) spectroscopy. The variation of measurement conditions during the initial photoexcitation and thermal emission, such as the heating rate, bias voltage, illumination time and delay time, may bring some significant effects on TSC spectra, leading to incomplete characterization of trap levels. In this work, defects with deep levels in the band gap of SI-Cd0.9Zn0.1Te crystal, grown by the modified vertical Bridgman (MVB) method, were studied via TSC measurements. TSC measurement of the SI-CZT sample was performed with the optimized measurement conditions. Ten different traps and a deep donor (EDD) level were characterized from the as-obtained spectrum in the temperature range from 25 to 310 K with the aid of simultaneous multiple peak analysis (SIMPA). The origins of these traps were identified in detail as well.


► Defects as trapping centers for SI-CZT material were evaluated by TSC spectroscopy.
► The effects of four different measurement conditions on TSC spectra were analyzed.
► All observed defects of SI-CZT were characterized with SIMPA fitting.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 361, 15 December 2012, Pages 25–29
نویسندگان
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