Keywords: تکنیک یا روش بریجمن; B2. Scintillator materials; B3. Scintillators; A2. Bridgman technique; A2. Single crystal growth; A2. Growth from melt; A1. X-ray diffraction;
مقالات ISI تکنیک یا روش بریجمن (ترجمه نشده)
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Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; A2. Edge defined film fed growth; A2. Czochralski method; A2. Growth from vapor; B3. Radiation detectors; B1. Thallium halides;
Keywords: تکنیک یا روش بریجمن; A1. Doping; A2. Bridgman technique; B1. Niobates;
Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; A2. Multiple-ampoule; B1. Halides; B2. Scintillator materials;
Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; B1. Calcium compounds; B2. Scintillator materials; B3. Scintillators;
Keywords: تکنیک یا روش بریجمن; A1. Computer simulation; A2. Bridgman technique; B1. Cadmium compounds
Keywords: تکنیک یا روش بریجمن; A1. Solidification; A1. Stability analysis; A2. Bridgman technique; A2. Detached growth; A2. Microgravity conditions; A2. Growth from melt;
Keywords: تکنیک یا روش بریجمن; A1. Directional solidification; A1. Heat transfer; A1. Computer simulation; A2. Bridgman technique; A2. Location
Keywords: تکنیک یا روش بریجمن; A1. Computer simulation; A1. Line defects; A1. Stresses; A2. Bridgman technique; B2. Semiconducting silicon;
Keywords: تکنیک یا روش بریجمن; A1. High resolution X-ray diffraction; A2. Bridgman technique; A2. Growth from solutions; B1. Organic compound
Keywords: تکنیک یا روش بریجمن; A1. Computer simulation; A1. Point defects; A2. Bridgman technique; Semiconducting cadmium compounds;
Keywords: تکنیک یا روش بریجمن; A1. Directional solidification; A1. Crystal structure; A1. Defects; A2. Bridgman technique; Multicrystalline silicon;
Keywords: تکنیک یا روش بریجمن; A1. Directional solidification; A1. Heat transfer; A1. Radiation; A1. Computer simulation; A2. Bridgman technique;
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A1. Defects; A1. Solidification; A2. Bridgman technique; B1. Lithium compounds; B2. Semiconducting ternary compounds;
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A1. Solidification; A2. Bridgman technique; B1. Lithium compounds; B2. Semiconducting ternary compounds
Keywords: تکنیک یا روش بریجمن; A1. Computer simulation; A1. Convection; A1. Heat transfer; A1. Mass transfer; A1. Impurities; A1. Interfaces; A1. Segregation; A2. Bridgman technique; A2. Microgravity conditions
Keywords: تکنیک یا روش بریجمن; A2. Bulk crystal growth; A2. Bridgman technique; A1. Radiation; B1. Lithium compounds; B3. Semiconductor neutron detector;
Keywords: تکنیک یا روش بریجمن; A1. Impurities; A2. Bridgman technique; B1. Aromatic compounds; B2. Nonlinear optic materials; B2. Semiconducting material
Keywords: تکنیک یا روش بریجمن; A1. Computer simulation; A2. Single crystal growth; A2. Bridgman technique; A2. Growth from melt; B1. Sapphire;
Investigation of Cd1âxMgxTe as possible materials for X and gamma ray detectors
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Alloys; B2. Semiconducting II-VI materials;
Crystal growth and scintillation performance of Cs2HfCl6 and Cs2HfCl4Br2
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A2. Bridgman technique; A2. Single crystal growth; B1. Halides; B2. Scintillator materials;
Single crystals with advanced laser properties LiCaAlF6:Ce3+ grown by Bridgman technique
Keywords: تکنیک یا روش بریجمن; A2. Single crystal growth; A2. Bridgman technique; B3. Solid state lasers; B3. Tunable ultraviolet laser;
Morphological instability of lamellar structures in directionally solidified Ni-Ni3Si alloys
Keywords: تکنیک یا روش بریجمن; A1. Directional solidification; A1. Eutectics; A1. Morphological stability; A2. Bridgman technique;
Semiconductor crystals based on CdTe with Se - Some structural and optical properties
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Alloys; B2. Semiconducting II-VI materials;
Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A2. Bridgman technique; B1. Cadmium compounds; B2 Semiconducting II-VI materials;
Interface control by rotating submerged heater/baffle in vertical Bridgman configuration
Keywords: تکنیک یا روش بریجمن; A1. Convection; A1. Heat transfer; A2. Bridgman technique; A2. Czochralski method; B1. Salts; A1. Interfaces; A1. Nusselt number;
Investigating new activators for small-bandgap LaX3 (Xâ¯=â¯Br, I) scintillators
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A2. Bridgman technique; A2. Growth from melt; B1. Halides; B1. Rare earth compounds; B3. Scintillators;
Crystal Growth and Scintillation Properties of Eu2+ doped Cs4CaI6 and Cs4SrI6
Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; A2. Single crystal growth; B1. Calcium compounds; B1. Halides; B2. Scintillator materials;
Exploring growth conditions and Eu2+ concentration effects for KSr2I5:Eu scintillator crystals II: à 25â¯mm crystals
Keywords: تکنیک یا روش بریجمن; A2. Single crystal growth; A2. Bridgman technique; B1. Halides; B1. Potassium compounds; B3. Scintillator;
Thermal expansion, luminescence, and scintillation properties of CaMoO4 crystals grown by the vertical Bridgman method
Keywords: تکنیک یا روش بریجمن; A1. Light output; A1. Oxygen vacancies; A2. Bridgman technique; B1. Molybdates; B2. Scintillator materials;
Segregation and microstructure evolution in chill cast and directionally solidified Ni-Mn-Sn metamagnetic shape memory alloys
Keywords: تکنیک یا روش بریجمن; A1. Directional solidification; A1. Segregation; A2. Bridgman technique; A2. Single crystal growth; B2. Magnetic materials;
High composition uniformity of 4â³ of PIN-PMN-PT single crystals grown by the modified Bridgman method
Keywords: تکنیک یا روش بریجمن; A1. High uniformity; A1. Segregation; A2. Bridgman technique; A2. Single crystal growth; B1. Perovskites; B2. Piezoelectric materials;
Si: crys_iccge18Growth and electrical properties characterization of Pb(In1/2Nb1/2)O3-PbTiO3 tetragonal single crystal by the modified flux-Bridgman method
Keywords: تکنیک یا روش بریجمن; A1. Crystal morphology; A2. Bridgman technique; A2. Single crystal growth; B1. Perovskites; B1. PIN-PT; B2. Piezoelectric materials;
Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing
Keywords: تکنیک یا روش بریجمن; A1. Line defects; A1. Substrates; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting ternary compounds;
Dynamics of spacing adjustment and recovery mechanisms of ABAC-type growth pattern in ternary eutectic systems
Keywords: تکنیک یا روش بریجمن; A1. Eutectics; A1. Solidification; A1. Directional solidification; A1. Optical microscopy; A2. Bridgman technique; B2. Alloys;
Crystal growth and characterization of undoped and Dy-doped TlPb2Br5 for infrared lasers and nuclear radiation detection
Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; A1. Doping; B1. Halides; B1. Semiconducting material; B3. Infrared devices;
Investigation on synthesis, growth and characterization of CdIn2S2Se2 single crystal grown by vertical Bridgman method
Keywords: تکنیک یا روش بریجمن; A1. Solidification; A2. Bridgman technique; A2. Single crystal growth; B1. Inorganic compounds; B2. Semiconducting indium compounds;
Crystal growth and characterization of Eu2+ doped RbCaX3 (XÂ =Â Cl, Br) scintillators
Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; A2. Single crystal growth; B1. Halides; B1. Calcium compounds; B3. Scintillator materials;
Growth and structure of Cd1–xDyxTe crystals
Keywords: تکنیک یا روش بریجمن; A1. Surface structure; A2. Bridgman technique; B1. Rare earth compounds; B2. Semiconducting II–VI materials
Compensation processes in high-resistivity CdZnTe crystals doped with In/Al
Keywords: تکنیک یا روش بریجمن; A1. Defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Exploring growth conditions and Eu2+ concentration effects for KSr2I5:Eu scintillator crystals
Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; A2. Single crystal growth; B1. Halides; B1. Potassium compounds; B3. Scintillator; Micro-resolution X-ray mapping
Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air
Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; A2. Growth from melt; A2. Single crystal growth; B1. Oxides; B2. Semiconducting gallium compounds
Quality improvement of CdMnTe:In single crystals by an effective post-growth annealing
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A2. Bridgman technique; B1. Cadmium compounds; B2 Semiconducting II–VI materials
Thermoelectric properties of Tl-doped PbTeSe crystals grown by directional solidification
Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; B2. Semiconducting lead compounds; B3. Thermoelectric materials;
Radial macrosegregation and dendrite clustering in directionally solidified Al-7Si and Al-19Cu alloys
Keywords: تکنیک یا روش بریجمن; A1. Directional solidification; A1. Computer simulation; A1. Fluid flows; A1. Segregation; A2. Bridgman technique; Aluminum alloys;
Growth and properties of 4-in. diameter ferroelectric single crystal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 by the seed-induced modified Bridgman technique
Keywords: تکنیک یا روش بریجمن; A1. Charaterization; A1. Homogeneity; A2. Bridgman technique; A2. Single crystal growth; B1. Perovskite; B2. Dielectric, Piezoelectric, Ferroelectric materials;
Growth of 2Â Inch Eu-doped SrI2 single crystals for scintillator applications
Keywords: تکنیک یا روش بریجمن; A2. Bridgman technique; A2. Growth from melt; B1. Halides; B2. Scintillator materials;
Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material׳s electrical properties
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A1. Defects; A2. Bridgman technique; B2. Semiconducting II–VI materials
The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed
Keywords: تکنیک یا روش بریجمن; A1. Directional solidification; A1. Eutectics; A2. Bridgman technique; B1. Oxides; B3. Light emitting diodes
Investigation of Te atmosphere annealing on the properties of detector-grade CdMnTe:In single crystals
Keywords: تکنیک یا روش بریجمن; A1. Characterization; A2. Bridgman Technique; B1. Cadmium compounds; B2. Semiconducting II–VI materials