Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air

• Single-crystal growth of β-Ga2O3 was studied by the vertical Bridgman (VB) method.
• β-Ga2O3 crystals were grown in platinum–rhodium alloy crucibles in ambient air.
• Single crystals with (100) faceted plane were grown without seeding.
• Growth direction of the crystals grown was perpendicular to the (100) faceted plane.

A new approach to β-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the β-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. β-Ga2O3 single crystals 25 mm in diameter were grown in platinum–rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane.