Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material׳s electrical properties

• Higher concentration of Te antisite-related deep donors was found in the tail.
• The compensation of deep-level defects results in low concentration of net free electrons.
• High resistivity with n-type conduction was demonstrated.
• Hall mobility is lower in the tail due to higher concentration of deep donors.

We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I–V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.