Keywords: گالیم آرسنید; Temperature; Optical properties; Lattice vibration; GaAs;
مقالات ISI گالیم آرسنید (ترجمه نشده)
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Keywords: گالیم آرسنید; Angle-resolved X-ray photoelectron spectroscopy (AR-XPS); Density functional theory (DFT); Growth kinetic model; Surface passivation; GaAs; GaN;
Keywords: گالیم آرسنید; GaAs; Droplet epitaxy; Nano-ring; Thermal etching;
Keywords: گالیم آرسنید; Piezoelectric; Quantum dot; GaAs; Interface effect; Interface elasticity;
Keywords: گالیم آرسنید; Low light illumination; Photovoltaic cells; InGaP; GaAs; Homojunction commercially available;
Keywords: گالیم آرسنید; Ag; silver; Ag2S; silver Sulfide; AIST; Japanese National Institute of Advanced Industrial Science and Technology; AM; air mass; a-Si; amorphous silicon; Au; gold; AZO; Al-doped ZnO; Bi2S3; bismuth(III) sulfide; CB; conduction band; CBD; chemical bath dep
Keywords: گالیم آرسنید; Fast atom diffraction; Elastic diffraction; Differential filter; Image processing; GaAs
Keywords: گالیم آرسنید; Tribochemical removal; Sliding velocity; AFM; GaAs;
Keywords: گالیم آرسنید; Flexoelectricity; Point charge; GaAs
Keywords: گالیم آرسنید; Potential with arbitrary shape; Finite difference method; Double quantum dots; Triple quantum dots; Diagonalization; Two-dimensional electron gas; GaAs; Quantum information;
Keywords: گالیم آرسنید; MBE; GaAs; Droplet epitaxy
Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry
Keywords: گالیم آرسنید; Nanoscale etching; GaAs; InP; Reaction mechanisms; Surface chemistry; III-V oxide; AFM; atomic force microscopy; ICP-MS; inductively coupled plasma mass spectrometry; XPS; x-ray photoemission spectrometry; GaAs; gallium arsenide; InP; indium phosphide; To
Modification of the GaAs native oxide surface layer into the layer of the Ga2O3 dielectric by an Ar+ ion beam
Keywords: گالیم آرسنید; GaAs; Native oxide; Chemical composition; Ga2O3; Photoelectron spectroscopy; Ar+ ion beam;
An X-ray photoelectron spectroscopy depth profile study on the InGeNi/(110) cleaved GaAs structure
Keywords: گالیم آرسنید; GaAs; XPS; Depth profile; Ohmic contact; Metal/semiconductor interface;
Super-resolution GaAs nano-structures fabricated by laser direct writing
Keywords: گالیم آرسنید; Laser direct writing; Periodic nano-structures; Gratings; GaAs;
Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition
Keywords: گالیم آرسنید; InSb; MOCVD; GaAs; Photodetector; Long wavelength;
Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures
Keywords: گالیم آرسنید; GaAs; Si; Heterostructures; Structure; Optical property;
Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation
Keywords: گالیم آرسنید; Hydrogen implantation; Electrical isolation; GaAs; AlGaAs/GaAs; Quantum Cascade Laser; RBS/c;
Concentric GaAs nanorings formation by droplet epitaxy - Monte Carlo simulation
Keywords: گالیم آرسنید; Droplet epitaxy; GaAs; Nanorings; Simulation; Monte Carlo;
Anomalous enhancement of the absorption coefficient of GaAs in a p-n junction
Keywords: گالیم آرسنید; GaAs; Absorption coefficient; p-n junction;
Phase optimization study of orthorhombic structured SnS nanorods from CTAB assisted polyol synthesis for higher efficiency thin film solar cells
Keywords: گالیم آرسنید; TFSCs; thin film solar cells; CZTS; copper zinc tin sulphide; CIGS; copper indium gallium sulphide; GaAs; gallium arsenide; CdTe; cadmium telluride; NPs; nanoparticles; Rt; reaction time; CTAB; cetyltrimethylammonium bromide; CBD; chemical bath deposition
The optimum condition of GaxIn1-xP/GaAs1-yPy strain compensation for excessive strained In0.15GaAs MQWs in 1000â¯nm infrared light-emitting diode
Keywords: گالیم آرسنید; InGaAs; GaAsP; GaAs; GaInP; Infrared; Light emitting diode;
Kinetics of (2â¯Ãâ¯4)â¯ââ¯(3â¯Ãâ¯1(6)) structural changes on GaAs(001) surfaces during the UHV annealing
Keywords: گالیم آرسنید; GaAs; Reflected High-Energy Electron Diffraction; Surface reconstructions; Phase transition kinetics;
A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates
Keywords: گالیم آرسنید; Crystalline defects; Defect density analysis; HAADF-STEM; EDX; Tomography; GaAs; Si nanostructures;
Phase formation between Ni thin films and GaAs substrate
Keywords: گالیم آرسنید; Thin films; Reaction; Self-diffusion; Intermetallic growth; Contacts; GaAs;
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
Keywords: گالیم آرسنید; Thermal stability; Interfacial trap density (Dit); Molecular-beam-epitaxy (MBE); HfO2; GaAs; Metal-oxide-semiconductor capacitors (MOSCAPs);
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)
Keywords: گالیم آرسنید; Atomic layer deposition; High κ; Y2O3; GaAs; MOS; Sub-nano-laminated;
An anti-reflective 1D rectangle grating on GaAs solar cell using one-step femtosecond laser fabrication
Keywords: گالیم آرسنید; GaAs; Femto-second laser Irradiation; Anti-reflective; Rectangle grating structure;
Design and fabrication of low power GaAs/AlAs resonant tunneling diodes
Keywords: گالیم آرسنید; GaAs; AlAs; Resonant tunneling diode; Oscillator; III-V compound semiconductor;
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
Keywords: گالیم آرسنید; Border trap; Interfacial trap; High-κ dielectric; GaAs; ALD; Y2O3;
Optically excited THz generation from ordered arrays of GaAs nanowires
Keywords: گالیم آرسنید; Terahertz generation; THz; III-V semiconductors; NWs; nanowires; GaAs; light absorption; leaky mods; MOVPE;
Below-band-gap absorption in undoped GaAs at elevated temperatures
Keywords: گالیم آرسنید; GaAs; Optical absorption; Urbach tail; Band gap;
Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing
Keywords: گالیم آرسنید; Atomic steps; Surface smoothing; Local oxidation; GaAs; Monte Carlo simulation;
Selective etching of GaAs grown over AlAs etch-stop layer in buffered citric acid/H2O2 solution
Keywords: گالیم آرسنید; Selective wet etching; Etch-stop layer; AlAs; GaAs;
Bandgap measurement of high refractive index materials by off-axis EELS
Keywords: گالیم آرسنید; Low-loss EELS; GaAs; Bandgap measurements; Relativistic losses;
2-D axisymmetric modeling for temperature of GaAs induced by repetitive pulse laser at 1064Â nm and 532Â nm
Keywords: گالیم آرسنید; Repetitive pulse laser; Laser heating; 2-D modeling; Different wavelengths; GaAs;
Mass and energy distribution of negatively and positively charged small cluster ions sputtered from GaAs(100) by 150Â keV Ar+ bombardment
Keywords: گالیم آرسنید; GaAs; Sputtering; Cluster; Energy distribution; Ionization probability;
Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1-1.5 THz
Keywords: گالیم آرسنید; Schottky barrier diode; Submillimeter-wave devices; Terahertz; GaAs; Diode cut-off frequency; Parasitic capacitance;
Modeling of laser heating GaAs considering the effects of atmospheric thermal blooming with crosswind
Keywords: گالیم آرسنید; Laser heating; GaAs; Thermal blooming; 2-D modeling;
Comparative study of GaAs and CdTe solar cell performance under low-intensity light irradiance
Keywords: گالیم آرسنید; GaAs; CdTe; Weak light; Solar cell; Cell parameters;
Thermal modeling, exergy analysis, performance of BIPV and BIPVT: A review
Keywords: گالیم آرسنید; CdTe; Cadmium Telluride; CIS; Copper Indium Gallium Selenide; GaAs; Gallium Arsenide; DC; Direct current; NZEB; Net-zero energy buildings; BIPV; Building-integrated photovoltaic; BAPV; Building applied photovoltaic; BIPVT; Building-integrated photovoltaic
Investigation of MBE grown inverted GaAs quantum dots
Keywords: گالیم آرسنید; QD; MBE; GaAs; Droplet epitaxy; PL; TEM;
Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs
Keywords: گالیم آرسنید; Gate dielectric; Interface trap density; GaAs;
Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference
Keywords: گالیم آرسنید; Periodic nanostructures; GaAs; Laser interference patterning;
On the validity of the Äerenkov limit as a criterion for precise band gap measurements by VEELS
Keywords: گالیم آرسنید; VEELS; Low-loss EELS; Äerenkov limit; GaAs; Band gap measurements;
Structural, optical and electrical characterization of InAs0.83Sb0.17 p-Ï-n photodetector grown on GaAs substrate
Keywords: گالیم آرسنید; MBE; InAsSb; GaAs; HRXRD; Photodetector;
Influence of α particle radiation on the structural and electronic properties of thin film GaAs solar cells: A simulation study
Keywords: گالیم آرسنید; GaAs; Solar cell degradation; Damage mechanism; SRIM; Charged particles
Correlation of Ti3+ states with photocatalytic enhancement in TiO2-passivated p-GaAs
Keywords: گالیم آرسنید; Photocatalysis; H2 evolution; Energy conversion; GaAs; TiO2; Solar fuel;
Thick orientation-patterned growth of GaP on wafer-fused GaAs templates by hydride vapor phase epitaxy for frequency conversion
Keywords: گالیم آرسنید; GaP; GaAs; Wafer fusion; Hydride vapor phase epitaxy; Nonlinear optical materials;