کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663762 | 1517994 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, optical and electrical characterization of InAs0.83Sb0.17 p-Ï-n photodetector grown on GaAs substrate
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High quality InAs0.83Sb0.17 mid-wavelength infrared p-Ï-n photodetector structure was grown with the aid of a GaSb transition layer on semi-insulating GaAs substrate by molecular beam epitaxy. The lattice mismatch and the crystal quality of the structure were investigated by high resolution X-ray diffraction rocking curve measurement. The full width at half maximum values for InAs0.83Sb0.17 and GaSb crystals were determined as 215 and 238 arcsec, respectively. The lattice mismatch between InAs0.83Sb0.17/GaSb structure and GaAs substrate was identified as 8.44%. Activation energies for two different temperature regimes were extracted from Arrhenius plot which was derived from temperature dependent dark current measurements. The dominant dark current mechanisms were determined as generation-recombination limited and surface leakage based for higher- and lower-temperature regimes, respectively. The cut off wavelength and the peak quantum efficiency of the photodetector were obtained from the spectral photoresponse as 4.23 μm and 24.3% at 80 K, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 616, 1 October 2016, Pages 141-144
Journal: Thin Solid Films - Volume 616, 1 October 2016, Pages 141-144
نویسندگان
M. Erkus, O. Senel, U. Serincan,