|کد مقاله||کد نشریه||سال انتشار||مقاله انگلیسی||ترجمه فارسی||نسخه تمام متن|
|1663831||1517995||2016||4 صفحه PDF||سفارش دهید||دانلود رایگان|
• Diamond films were selectively grown with Ti/Au masks by hot-filament CVD.
• Contamination from metal masks to diamond was effectively suppressed.
• Submicron scale patterning with good surface morphology was realized.
Selective-area growth, which can be an alternative to ion implantation, is an important technology for processing diamond power devices. In conventional chemical vapor deposition (CVD), a portion of the metal mask (non-growing region) peels off and is unintentionally incorporated into the film; therefore, creating high-quality fine patterns is a great challenge. In this study, we developed a technique to fabricate fine structures on a submicron scale by employing hot-filament (HF) CVD. The mask pattern was kept intact during growth, and submicron-scale selective-area growth was realized. As a result, contamination-free metallic p+ diamond films possessing a smooth surface morphology were successfully selectively grown.
Journal: Thin Solid Films - Volume 615, 30 September 2016, Pages 239–242