2-D axisymmetric modeling for temperature of GaAs induced by repetitive pulse laser at 1064Â nm and 532Â nm

In this paper, a two-dimensional(2-D) axisymmetric modeling for temperature of GaAs induced by repetitive pulse laser at 1064 nm and 532 nm is presented. Firstly, mathematical modeling of repetitive pulse laser heating was established based on classical heat conduction theory, and its analytical solutions was obtained by using integral transform method. Then, two types of repetitive pulse lasers are selected, and temperature distributions of GaAs were simulated considering 1064 nm and 532 nm lasers irradiation respectively. Results show that, in the thin layer of GaAs surface vicinity, temperature rises due to absorption of irradiated energy dominates over the conduction energy transport from surface to vicinity. As the depth increases, the absorption decreases, whereas the conduction enhances. The temporal temperature distributions of the 532 nm laser with depths decay more rapidly than that of the 1064 nm laser due to the difference in the absorption coefficient.