کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150689 | 1462195 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Design and fabrication of low power GaAs/AlAs resonant tunneling diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
A very low peak voltage GaAs/AlAs resonant tunneling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28Â V (0.53Â V) in forward (reverse) direction. The peak current density in forward bias is around 15.4Â kA/cm2 with variation of within 7%. As for reverse bias, the peak current density is around 22.8Â kA/cm2 with 4% variation which implies excellent scalability. In this work, we have successfully demonstrated the fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based sub-millimetre wave oscillators.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 138, December 2017, Pages 30-34
Journal: Solid-State Electronics - Volume 138, December 2017, Pages 30-34
نویسندگان
Mohamad Adzhar Md Zawawi, Mohamed Missous,