Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)

Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 271-274

K.Y. Lin, L.B. Young, C.K. Cheng, K.H. Chen, Y.H. Lin, H.W. Wan, R.F. Cai, S.C. Lo, M.Y. Li, J. Kwo, M. Hong,