Dopant imaging of power semiconductor device cross sections

• Dopant imaging of Si and SiC power semiconductor device cross sections
• Laser illuminated Kelvin Probe Force Microscopy (KPFM)
• Scanning Capacitance Force Microscopy
• Doping concentrations as low as 1014 cm− 3 detectable
• Discussion of the measurements with numerical simulations

Several Scanning Probe Microscopy (SPM) methods allow to image dopant profiles in a range from 1014 cm− 3 to 1019 cm− 3 on semiconducting samples. In our work we present Scanning Capacitance Force Microscopy (SCFM) and Kelvin Probe Force Microscopy (KPFM) experiments performed on cross sections of silicon (Si) and silicon carbide (SiC) power devices and epitaxially grown calibration layers. The contact potential difference (CPD) shows under illumination a reduced influence on surface defect states. In addition results from numerical simulation of these microscope methods are discussed.

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