کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7985947 | 1515103 | 2018 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Crystal defects present in GaAs nanocrystals â¼15-50â¯nm in diameter and grown by metal organic vapor phase epitaxy on top of two different nanopatterned Si(001) substrates (nanopillars and nanotips with â¼40-80â¯nm openings embedded in a SiO2 matrix) and on a planar substrate, have been investigated by means of atomic-resolution aberration-corrected scanning transmission electron microscopy. Conditions of their formation are discussed. The defect analysis of the three GaAs/Si systems reveals a higher defect density in the GaAs crystals grown on nanopillars as compared to those grown on nanotips and the planar substrate, possibly concomitant to the atomic-scale irregularities identified at the patterned Si(001) nanopillars. It is concluded that the misfit strain in the GaAs nanocrystals is fully plastically relaxed while no noticeable substrate compliance effects are observed on any of the studied substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Micron - Volume 113, October 2018, Pages 83-90
Journal: Micron - Volume 113, October 2018, Pages 83-90
نویسندگان
Roksolana Kozak, Ivan Prieto, Yadira Arroyo Rojas Dasilva, Rolf Erni, Hans von Känel, Gian-Luca Bona, Marta D. Rossell,