کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7985947 1515103 2018 22 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates
چکیده انگلیسی
Crystal defects present in GaAs nanocrystals ∼15-50 nm in diameter and grown by metal organic vapor phase epitaxy on top of two different nanopatterned Si(001) substrates (nanopillars and nanotips with ∼40-80 nm openings embedded in a SiO2 matrix) and on a planar substrate, have been investigated by means of atomic-resolution aberration-corrected scanning transmission electron microscopy. Conditions of their formation are discussed. The defect analysis of the three GaAs/Si systems reveals a higher defect density in the GaAs crystals grown on nanopillars as compared to those grown on nanotips and the planar substrate, possibly concomitant to the atomic-scale irregularities identified at the patterned Si(001) nanopillars. It is concluded that the misfit strain in the GaAs nanocrystals is fully plastically relaxed while no noticeable substrate compliance effects are observed on any of the studied substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Micron - Volume 113, October 2018, Pages 83-90
نویسندگان
, , , , , , ,