Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs

Interfacial properties of n-GaAs metal-oxide-semiconductor (MOSCAPs) with the gate dielectrics of HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox are investigated. The results reveal that Hf0.5Al0.5Ox has larger permittivity and lower interface trap density than that of HfO2/Al2O3. In order to explain the result from the physical perspective, the XPS tests of all three samples are performed. It is found that the main reason to form interface trap of three samples treated with 500 °C post-deposition annealing, is attributed to the interfacial component of Ga2O3 and The Hf0.5Al0.5Ox dielectric is beneficial to reducing the formation of Ga2O3.