Keywords: چگالی دامنه رابط; Organic field effect transistors; CuPc; Scanning tunneling microscope; Interface trap density; Carrier mobility;
مقالات ISI چگالی دامنه رابط (ترجمه نشده)
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Keywords: چگالی دامنه رابط; Bulk trap density; Charge pumping method; Hot carrier effect; Interface trap density
Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
Keywords: چگالی دامنه رابط; AlON; InGaAs; Atomic layer deposition; Interface trap density; MOS capacitor;
Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al-BSF for c-Si solar cells
Keywords: چگالی دامنه رابط; Rear surface passivation; c-Si solar cell; Refractive index; Interface trap density; Surface recombination velocity;
Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
Keywords: چگالی دامنه رابط; GaN; GaN-on-insulator (GaNOI); TMAH surface treatment; C-V characteristics; Interface trap density; Frequency dispersion;
Suppressed charge trapping characteristics of (NH4)2Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric
Keywords: چگالی دامنه رابط; Sulfur passivation; Interface trap density; Charge trapping; GaN device;
Demonstration of 2e12 cmâ 2 eVâ 1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5 nm EOT
Keywords: چگالی دامنه رابط; 2D materials CV; MoS2; Interface trap density;
Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer
Keywords: چگالی دامنه رابط; 4H-SiC; Metal-Oxide-Semiconductor (MOS) capacitor; Lanthanum silicate (LaSiOx) passivation layer; Interface trap density;
Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics
Keywords: چگالی دامنه رابط; Indium gallium zinc oxide; Co-sputtering, high-κ dielectric; Thin-film transistor; Zirconium silicon oxide; Interface trap density;
20Â nm high performance novel MOSHEMT on InP substrate for future high speed low power applications
Keywords: چگالی دامنه رابط; CMOS; Interface trap density; Metal oxide semiconductor high electron mobility transistor (MOSHEMT); Quantum well (QW);
Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs
Keywords: چگالی دامنه رابط; Gate dielectric; Interface trap density; GaAs;
Low-frequency noise in bare SOI wafers: Experiments and model
Keywords: چگالی دامنه رابط; SOI; Pseudo-MOSFET; Interface trap density; Low-frequency noise;
The effects of (NH4)2Sx treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack
Keywords: چگالی دامنه رابط; Ammonium polysulfide; Interface trap density; Passivation; GaN device;
Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation
Keywords: چگالی دامنه رابط; Ge; MOS; XPS; Interface trap density; Passivation;
Analysis of relaxation time and density of interface trap on perylene-diimide (PDI)/p-Si (100) Schottky diodes
Keywords: چگالی دامنه رابط; Perylene-diimide thin film; Atomic force microscopy; Spin coating; Interface trap density; Relaxation time
Formation of amorphous Yb2O3/crystalline ZrTiO4 gate stack and its application in n-MOSFET with sub-nm EOT
Keywords: چگالی دامنه رابط; Orthorhombic ZrTiO4; Yb2O3; EOT; Interface trap density; Fixed oxide charge; Mobility; Reliability; BTI;
Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates
Keywords: چگالی دامنه رابط; GaSb substrate; High-k dielectrics; Ozone; Interface trap density;
Epitaxial thin films of BaSrO as gate dielectric
Keywords: چگالی دامنه رابط; High-k dielectrics; Crystalline oxide; Interface trap density; Band offset; Thermal stability;
High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structure
Keywords: چگالی دامنه رابط; YGeOx; Thermal oxidation; Surface passivation; Interface trap density; Reliability; Ge MOS devices;
Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC
Keywords: چگالی دامنه رابط; Oxide breakdown field; Passivation; Oxidation; Anneal; 4H-SiC; Interface trap density;
Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel
Keywords: چگالی دامنه رابط; a-IGZO TFTs; Film densification; Interface trap density; IGZO refractive index; Surface roughness
Low-frequency noise and mobility in triple-gate silicon-on-insulator transistors: Evidence for volume inversion effects
Keywords: چگالی دامنه رابط; MuGFETs; SOI (silicon-on-insulator); Volume inversion; Low-frequency noise; Interface trap density;
Phosphorous passivation of the SiO2/4H–SiC interface
Keywords: چگالی دامنه رابط; Phosphorous; Interface trap density; Channel mobility; Threshold voltage stability
Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors
Keywords: چگالی دامنه رابط; MOS device; Electron irradiation; Interface trap density; Flat band voltage; Leakage current; Al2O3
Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors
Keywords: چگالی دامنه رابط; Poole–Frenkel coefficient; Flat band voltage; Interface trap density; Surface charge density
Dosimetry aspects of hafnium oxide metal-oxide-semiconductor (MOS) capacitor
Keywords: چگالی دامنه رابط; Hafnium oxide; Thin films; Metal-oxide-semiconductor capacitor; Radiation dosimeter; Interface trap density; Electron beam evaporation
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices
Keywords: چگالی دامنه رابط; Silicon carbide; Oxide interface; Plasma nitridation; Interface trap density; Channel mobility
Analysis of interface trap density of metal–oxide-semiconductor devices with Pr2O3 gate dielectric using conductance method
Keywords: چگالی دامنه رابط; Interface trap density; Pr2O3; Gate dielectric; Conductance method
Electrical and chemical analysis of zinc oxide interfaces with high dielectric constant barium tantalate and aluminum oxide in metal-insulator-semiconductor structures fabricated at Low temperatures
Keywords: چگالی دامنه رابط; Zinc oxide; Metal-insulator-semiconductor; Dielectric constant; High-κ materials; Interface trap density; Barium tantalate; Aluminium oxide; Sputtering
Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique
Keywords: چگالی دامنه رابط; Interface trap density; High k dielectric; Cerium oxide; Barrier height
Tunneling barrier engineered charge trap flash memory with ONO and NON tunneling dielectric layers
Keywords: چگالی دامنه رابط; VARIOT; CRESTED; Charge trap flash; Tunnel barrier engineering; Interface trap density
Electrical characteristics of Ge MOS device on Si substrate with thermal SiON as gate dielectric
Keywords: چگالی دامنه رابط; Ge MOS devices; Thermal SiON; Gate dielectric; Interface trap density; Conduction mechanism
Correlation between the interface states and ultraviolet treatment for low-voltage pentacene thin-film transistors
Keywords: چگالی دامنه رابط; Organic thin-film transistor; Ultraviolet treatment; Interface trap density
1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
Keywords: چگالی دامنه رابط; Strained SiGe; High-k; Low frequency noise; Gate leakage; Interface trap density
Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films
Keywords: چگالی دامنه رابط; Er-silicate; Interfacial reaction; High-k; EOT; Interface trap density;
Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate
Keywords: چگالی دامنه رابط; GaN; Free-standing substrate; Thermal oxidation; Wet chemical etching; Reactive ion etching; MOS; Interface trap density
Degradation of 1/f noise in short channel MOSFETs due to halo angle induced VT non-uniformity and extra trap states at interface
Keywords: چگالی دامنه رابط; Silicon; Silicon dioxide; Low-frequency noise; Halo angle; Interface trap density; Oxide trap density; Hot carrier effect; Threshold voltage
Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios
Keywords: چگالی دامنه رابط; 73.40.Qv; 81.15.CdHafnium oxide; Interface trap density; Sputtering
Electrical characteristic enhancement of metal–oxide–semiconductor devices by incorporating HfON buffer layer at HfTaSiON/Si interface
Keywords: چگالی دامنه رابط; HfTaSiON; Metal–oxide–semiconductor; HfON; Buffer layer; Interface trap density; Stress-induced leakage current (SILC); X-ray photoelectron spectroscopy (XPS)