کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6944330 1450383 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-frequency noise and mobility in triple-gate silicon-on-insulator transistors: Evidence for volume inversion effects
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Low-frequency noise and mobility in triple-gate silicon-on-insulator transistors: Evidence for volume inversion effects
چکیده انگلیسی
The low-frequency noise (LFN) characteristics of triple-gate MOSFET with various fin widths are shown to exhibit 1/f type dependence. We show that LFN is generated by two parallel mechanisms, involving (i) the carrier number fluctuations due to trapping/release phenomena on the near-interface traps and (ii) the carrier mobility fluctuations in the channel. The relative contribution of each mechanism to LFN depends on the biasing conditions and varies with the fin width. The region of dominance of model (i) can be used for extracting the effective trap density, Nt, which decreases as the fin becomes thinner. That is attributed to the carrier confinement in the central part of the transistor body, due to the volume inversion. The volume inversion effect is confirmed by independent measurements of low-field mobility, shown to be enhanced with the reduction of the fin width. The model (ii) contributes to LFN, only at small current values as it exhibits a power spectral density dependence varying as 1/Id. Random telegraph noise is manifested in small volume devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 98, October 2012, Pages 85-88
نویسندگان
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